Properties of InP Films Grown by Organometallic VPE Method
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概要
- 論文の詳細を見る
Vapor phase epitaxial growth of InP was carried out using triethylindium and PH_3 on semi-insulating InP substrate. Triethylindium and PH_3 were mixed after they were introduced to the reactor, which reduced the formation of an intermediate compond and resulted in successful growth of high quality InP films under normal pressure. The growth rate was as high as 4〜5μm per hour. The best mobility obtained was 36300 cm^2/V・s at 77 K. The photoluminescence intensities are comparable to those of LPE and LEC crystals of equivalent doping level.
- 社団法人応用物理学会の論文
- 1980-07-05
著者
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Horikoshi Yoshiji
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Fukui Takashi
Musashino Electrical Communication Laboratories N.t.t.
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