Organometallic VPE Growth of InAs_<1-x>Sb_x on InAs
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概要
- 論文の詳細を見る
InAs_<1-x>Sb_x vapor phase epitaxial growth was carried out on InAs substrate using triethylindium, triethylantimony and arsine. The vapor-solid distribution relations for the group V elements were obtained. A simplified formula for the distribution relation, which assumes thermodynamical equilibrium, is presented. The calculated distribution relation was fitted with experimental results. To study the lattice deformations rocking-curve measurements were made using X-ray double-crystal diffraction for (004) and (115) planes. The lattice distortion gradually decreased with increasing lattice mismatch up to 7 %, and cross-hatched surfaces were also observed in this region.
- 社団法人応用物理学会の論文
- 1980-01-05
著者
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Horikoshi Yoshiji
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Horikoshi Yoshiji
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Fukui Takashi
Musashino Electrical Communication Laboratories N.t.t.
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Horikoshi Yoshiji
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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