Liquid Phase Epitaxial Growth of InAs_<1-x-y>P_xSb_y on InAs Substrate
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概要
- 論文の詳細を見る
InAsPSb quaternary alloy, lattice-matched to InAs substrate, is promising material for 3-4 μm wavelength optical sources. This quaternary alloy was grown on (001) InAs substrate by liquid phase epitaxy. The lattice constant for this epitaxial layer, grown by the equilibrium cooling method, increases along the growth direction, because P content in this quaternary decreases and Sb content increases along the growth direction. The InAs-InP-InSb pseudoternary phase diagram was also calculated. From these results, it was shown that in order to obtain a quaternary solid with higher P and Sb concentration under lattice-matching to InAs substrate condition, lower growth temperature is required.
- 社団法人応用物理学会の論文
- 1981-12-05
著者
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Horikoshi Yoshiji
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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KOBAYASHI Naoki
Musashino Electrical Communication Laboratory Nippon Telegraph & Telephone Public Corporation
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Horikoshi Yoshiji
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kobayashi Naoki
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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