Required Donor Concentration of Epitaxial Layers for Efficient InGaAsP Avalanche Photodiodes
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概要
- 論文の詳細を見る
Distinction between an avalanche and a zener breakdown has been made theoretically for the In_<1-x>Ga_xAs_<1-y>P_y alloy lattice-matched to InP substrate. Experimental results of temperature dependence and donor concentration dependence of the breakdown voltages for In_<0.89>Ga_<0.11>As_<0.26>P_<0.74> and In_<0.53>Ga_<0.47>As APDs are in good agreement with the theoretical result. Based on both theory and experiment, the critical donor concentration N^+_D, in which an avalanche and a zener mechanism exchange places, has been established for the In_<1-x>Ga_xAs_<1-y>P_y alloys. It has been found that N^+_D' lie near 6×10^<14>cm^<-3> for In_<0.53>Ga_<0.47>As, 9×10^<15> cm^<-3> for In_<0.72>Ga_<0.28>As_<0.62>P_<0.38> and 2×10^<17> cm^<-3> for InP, respectively.
- 社団法人応用物理学会の論文
- 1980-04-05
著者
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Horikoshi Yoshiji
Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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Kawashima Minoru
Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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Horikoshi Yoshiji
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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TAKANASHI Yoshifumi
Musashino Electrical Communication Laboratory, N.T.T.
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Takanashi Yoshifumi
Musashino Electrical Communication Laboratory N.t.t.
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Takanashi Yoshifumi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Takanashi Yoshifumi
Musashino Electrical Communication Laboratory N.t.t
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