Simultaneous Diffusion of Zinc and Cadmium into InAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-02-05
著者
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Horikoshi Yoshiji
Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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Saito Hisao
Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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Horikoshi Yoshiji
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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TAKANASHI Yoshifumi
Musashino Electrical Communication Laboratory, N.T.T.
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Takanashi Yoshifumi
Musashino Electrical Communication Laboratory N.t.t.
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Takanashi Yoshifumi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Takanashi Yoshifumi
Musashino Electrical Communication Laboratory N.t.t
関連論文
- Electric-Field-Enhanced Extrinsic Photoluminescence in AlGaAs-GaAs Single-Quantum Wells
- Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures
- Room Temperature Operation of Al_Ga_Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy
- A Segmented Electrode Multi-Quantum-Well Laser Diode
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs-GaAs Superlattices
- Optical Absorption Characteristics of GaAs-AlGaAs Multi-Quantum-Well Heterostructure Waveguides
- Semiconductor Materials for 2〜4μm Region Optical Sources and Room Temperature Operation of InGaAsSb/AlGaAsSb DH Lasers : SOLID SOLUTIONS
- Room Temperature Operation of the InGaAsSb/AlGaAsSb DH Laser at 1.8 μm Wavelength
- Liquid-Phase Epitaxial Growth of InGaAsSb/GaSb and InGaAsSb/AlGaAsSb DH Wafers
- InGaAs/InGaAsP Avalanche Photodiodes and Analysis of Internal Quantum Efficiency
- Required Donor Density of Epitaxial Layers for Al_xGa_Sb Avalanche Photodiodes
- Organometallic VPE Growth of InAs_Sb_xP_y on InAs
- (InAs)_1(GaAs)_1 Layered Crystal Grown by MOCVD
- GaAs-AlGaAs DH Lasers with Buried Facet
- Accelerated Life Test of AlGaAs-GaAs DH Lasers
- Improved Surface Morphology of AlGaAs-GaAs Heteroepitaxial Wafers by Magnesium Doping
- Lifetime of InGaAsP-InP and AlGaAs-GaAs DH Lasers Estimated by the Point Defect Generation Model
- Surface Defects on MBE-Grown GaAs
- Direct Observation of Lattice Arrangement in MBE Grown GaAs-AlGaAs Superlattices
- InGaAsP/InP Avalanche Photodiode Prepared by Zn-Diffusion
- Evidence of Total Reflection Mode Oscillation in PbSnSeTe-PbSeTe Double-Heterostructure Lasers
- PbSnSeTe-PbSeTe Lattice-Matched Double-Heterostructure Lasers
- Low Threshold PbSnSeTe-PbSeTe Lattice-Matched Double-Heterostructure Lasers
- Simultaneous Diffusion of Zinc and Cadmium into InAs
- Required Donor Concentration of Epitaxial Layers for Efficient InGaAsP Avalanche Photodiodes
- Low-Temperature Behavior of the Threshold Current and Carrier Lifetime of InGaAsP-InP DH Lasers
- Degradation of InGaAsP-InP DH Lasers by In Solder
- Analysis of Dark Currents and Minimum Detectable Powers for InGaAsP Optical Receivers
- Liquid Phase Epitaxial Growth of In_Ga_xAs_Sb_y with InAs Enriched Composition on InAs Substrate
- Liquid Phase Epitaxial Growth of InAs_P_xSb_y on InAs Substrate
- (InAs)_1(GaAs)_1 Layered Crystal Grown on (100)InP by MOCVD
- Organometallic VPE Growth of InAs
- Field Effect of InP Photoluminescence in InP-Electrolyte Structure
- Reduction of Quantum Noise in Very Narrow Planar Stripe Lasers
- Effect of Impurities on the Quantum Shot Noise Resonance in Double-Heterostructure Lasers
- Effect of Impurities on Relaxation Oscillation of Double-Heterostructure Lasers
- Anomalous Luminescence near the InGaAsP-InP Heterojunction Interface
- Properties of InP Films Grown by Organometallic VPE Method
- Comparison between Atmospheric and Reduced Pressure GaAs MOCVD
- Organometallic VPE Growth of InAs_Sb_x on InAs
- InAsSbP-InAs Superlattice Grown by Organometallic VPE Method
- Optically Induced Low Photoluminescence Regions in InGaAsP
- Ionization Coefficient of InGaAsP/InP APD
- InGaAsP/InP Avalanche Photodiode
- Temperature Dependence of Ionization Coefficients for InP and 1.3 μm InGaAsP Avalanche Photodiodes
- Noise Performance of 1.3 μm InGaAsP Avalanche Photodiode at -190℃
- Interdiffusion of Al and Ga in Si-Implanted GaAs-AlAs Superlattices
- DH Lasers Fabricated by New III-V Semiconductor Material InAsPSb
- 1.5μm InGaAsP/InP DH Laser with Optical Waveguide Structure
- Pseudoquaternary Phase Diagram Calculation of In_ Ga_xAs_Sb_y Quaternary System
- Effect of Impurity Diffusion on the Characteristics of Avalanche Photodiode
- InP MIS Diodes Prepared by Anodic Oxidation