(InAs)_1(GaAs)_1 Layered Crystal Grown on (100)InP by MOCVD
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概要
- 論文の詳細を見る
The crystal growth process is investigated for a (InAs)_1(GaAs)_1 layered crystal (LC) grown on (100) oriented InP by metallorganic chemical vapor deposition (MOCVD). It is shown that substrate misorientation strongly affects the layered crystal properties. Macroscopic growth steps are observed when these LCs are grown on (100) vicinal oriented InP substrates (α=2°). Furthermore, the superlattice orientation is in the (100) direction and does not reflect the original substrate surface. The results indicate that preferential layer nucleation of InAs/GaAs takes place along (100) singular surfaces.
- 社団法人応用物理学会の論文
- 1985-10-20
著者
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Fukui Takashi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Fukui Takashi
Musashino Electrical Communication Laboratory Ntt
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Saito Hisao
Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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Saito Hisao
Musashino Electrical Communication Laboratory Ntt
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Fukui Takashi
Musashino Electrical Communication Laboratories N.t.t.
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