Analysis of Dark Currents and Minimum Detectable Powers for InGaAsP Optical Receivers

概要

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The dark current for 1.3 μm InGaAsP and In_<0.53>Ga_<0.47>As avalanche photodiodes was found to consist of two components: (1) a band-to-band tunneling current observed near the breakdown voltage and (2) a generation current at a lower bias voltage. An extensive estimation of the dark current for both diodes is made over a wide range of the donor density for epitaxial wafers on the basis of experimental results. Calculations of the minimum detectable power are made for InGaAsP optical receivers, including avalanche photodiodes and PIN diodes, as a function of various parameters according to the theory by Smith et al. A comparison between minimum detectable powers for avalanche photodiodes ana PIN diodes reveals that for λ=1.3 μm, 1.3 μm InGaAsP avalanche photodiodes can provide a better sensitivity than In_<0.53> Ga_<0.47>As PIN diodes whereas for λ=1.5 μm, In_<0.53>Ga_<0.47>As PIN diodes can provide a sensitivity comparable to or better than In_<0.53>Ga_<0.47>As avalanche photodiodes.
社団法人応用物理学会の論文
1981-10-05