Ploog K | Paul Drude Inst. Berlin Deu
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概要
関連著者
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Ploog K
Paul Drude Inst. Berlin Deu
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Ploog Klaus
Max-planck-institut Fur Festkorperforshung
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Ploog Klaus
Max-planck-institut Fur Festkorperforschung
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Ploog Klaus
Max-Planck-Institut
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Ploog K
Max‐planck‐inst. Festkoerperforschung Stuttgart Deu
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FUJIWARA Kozo
Institute for Materials Research (IMR), Tohoku University
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Miguel Jose
Max-planck-institut Fur Festkorperforshung:centro Nacional De Microelectronica
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Fischer Albrecht
Max-planck-institut Fur Festkorperforschung
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HORIKOSHI Yoshiji
NTT Electrical Communications Laboratories
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FUJIWARA Kenzo
Max-Planck-Institut fur Festkorperforshung
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Fujiwara K
Institute For Materials Research (imr) Tohoku University
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Fischer A
Max‐planck‐inst. Festkoerperforschung Stuttgart Deu
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Fischer A
Institut Fur Zoologie Universitat Mainz
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Briones Fernando
Max-planck-institut Fur Festkorperforshung:centro Nacional De Microelectronica
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Ploog Klaus
Paul-drude-institute For Solid State Electronics
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HEY Rudolf
Paul-Drude-Institut fur Festkorperelektronik
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SCHUBERT Erdman
Max-Planck-Institut fur Festkorperforschung
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HORIKOSHI Yoshiji
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation
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KOSTIAL Helmar
Paul-Drude-Institut fur Festkorperelektronik
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IHN Thomas
Paul-Drude-Institut fur Festkorperelektronik
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ASCHE Marion
Paul-Drude-Institut fur Festkorperelektronik
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KOCH Frederik
Physikdepartment der TU Munchen
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Ihn T
Univ. Nottingham Nottingham Gbr
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Koch F
Technical Univ. Munich Garching Deu
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Kostial H
Paul‐drude‐inst. Festkoerperelektronik Berlin Deu
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PLOOG Klaus
. Serrano
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Horikoshi Yoshiji
Ntt Electrial Communication Laboratories
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Ploog Klaus
Paul-drude-institut Feur Festkoerperelektronik Berlin Germany
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Hey R
Paul‐drude‐inst. Festkoerperelektronik Berlin Deu
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Hey Rudolf
Paul-drude Institut Fur Festkorperelektronik
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Schubert Erdman
Max-planck-institut Fur Festkorperforschung:(present Address) At & T Bell Laboratories
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Horikoshi Yoshiji
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
著作論文
- High-Mobility Two-Dimensional Electron Gas from Delta-Doped Asymmetric Al_xGa_As/GaAs/Al_yGa_As Quantum Wells
- Electric-Field-Enhanced Extrinsic Photoluminescence in AlGaAs-GaAs Single-Quantum Wells
- Impurity-Induced Breakdown in GaAs with Partially Ordered Si-Doping
- Effect of Aluminium Composition on the Luminescence of AlAs/Al_xGa_As Multiple Quantum Wells
- Improved Heterointerface and Vertical Transport in GaAs Single Quantum Well Confined by All-Binary GaAs/AlAs Short-Period-Superlattices