Impurity-Induced Breakdown in GaAs with Partially Ordered Si-Doping
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-30
著者
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Ploog K
Paul Drude Inst. Berlin Deu
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Ploog Klaus
Max-planck-institut Fur Festkorperforshung
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Ploog Klaus
Paul-drude-institute For Solid State Electronics
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HEY Rudolf
Paul-Drude-Institut fur Festkorperelektronik
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KOSTIAL Helmar
Paul-Drude-Institut fur Festkorperelektronik
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IHN Thomas
Paul-Drude-Institut fur Festkorperelektronik
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ASCHE Marion
Paul-Drude-Institut fur Festkorperelektronik
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KOCH Frederik
Physikdepartment der TU Munchen
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Ihn T
Univ. Nottingham Nottingham Gbr
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Koch F
Technical Univ. Munich Garching Deu
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Kostial H
Paul‐drude‐inst. Festkoerperelektronik Berlin Deu
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Ploog Klaus
Paul-drude-institut Feur Festkoerperelektronik Berlin Germany
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Hey R
Paul‐drude‐inst. Festkoerperelektronik Berlin Deu
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Hey Rudolf
Paul-drude Institut Fur Festkorperelektronik
関連論文
- Surfaces and Interfaces of (Al, Ga) As Heterostructures on Unpatterned and Patterned GaAs Substrates
- Interface Characterization of Semiconductor Quantum Nanostructures ( Quantum Dot Structures)
- Self-Oscillations of the Current in Doped Semiconductor Superlattices
- Atomic Hydrogen Induced Step Bunching on High-Index GaAs Substrates for Fabrication of Novel Quantum Wire and Quantum Dot Arrays by Molecular Beam Epitaxy
- New Challenges for Deltalike Confinement of Impurities in GaAs
- High-Mobility Two-Dimensional Electron Gas from Delta-Doped Asymmetric Al_xGa_As/GaAs/Al_yGa_As Quantum Wells
- Electric-Field-Enhanced Extrinsic Photoluminescence in AlGaAs-GaAs Single-Quantum Wells
- Impurity-Induced Breakdown in GaAs with Partially Ordered Si-Doping
- In Situ Controlled Growth of Low-Temperature GaAs and Its Application for Mode-Locking Devices
- Low-Temperature-Grown GaAs-In Situ Characterization and Application
- Interpretation of Capacitance-Voltage Profiles from Delta-Doped GaAs Grown by Molecular Beam Epitaxy
- Effect of Aluminium Composition on the Luminescence of AlAs/Al_xGa_As Multiple Quantum Wells
- Improved Heterointerface and Vertical Transport in GaAs Single Quantum Well Confined by All-Binary GaAs/AlAs Short-Period-Superlattices
- Weak Antilocalization in Si δ-Doped In_xGa_As Systems
- Pressure Dependence of the Valence-Band Offset in (GaAs)_8/(Al_Ga_As)_ Short Period Superlattice
- 25p-YE-1 Highly uniform GaAs quantum wire and quantum dot arrays grown on patterned high-index substrates by hydrogen-assisted MBE
- Magnetotransport in Two Parallel Two-Dimensional Electron Gases Formed by a Delta-Doped Layer and a Heterojunction in GaAs
- Room Temperature Performance of (311) GaAs Quantum-Wire Structures
- Nucleation, Relaxation and Redistribution of Si Layers in GaAs
- Electrical Properties of GaAs Overgrown by Molecular Beam Epitaxy on Gallium Ion Implanted Substrates
- Optical and Resonant Tunnelling Spectroscopy of Self-Assembled Quantum Dot Systems
- Magnetotunnelling and Photoluminescence Spectroscopy of Self-Assembled InAs Quantum Dots ( Quantum Dot Structures)
- High Carbon Doping of GaAs and AlAs in Distributed Bragg Reflectors
- Micro-Photoluminescence Study at Room Temperature of Sidewall Quantum Wires Formed on Patterned GaAs (311)A Substrates by Molecular Beam Epitaxy
- Long-range spin transport by acoustic fields in GaAs quantum wells