Surfaces and Interfaces of (Al, Ga) As Heterostructures on Unpatterned and Patterned GaAs Substrates
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-07-30
著者
-
Grahn Holger
Paul-drude-institut Fur Festkorperelektronik
-
Notzel Richard
Paul-drude-institut Fur Festkorperelektronik
-
Ploog Klaus
Paul-drude-institute For Solid State Electronics
-
JAHN Uwe
Paul-Drude-Institut fur Festkorperelektronik.
-
HEY Rudolf
Paul-Drude-Institut fur Festkorperelektronik
-
Jahn Uwe
Paul-drude-institut Fur Festkorperelektronik. : Research Center For Quantum Effect Electronics Tokyo
-
Ploog Klaus
Paul-drude-institut Feur Festkoerperelektronik Berlin Germany
-
Hey Rudolf
Paul-drude Institut Fur Festkorperelektronik
-
Jahn Uwe
Paul-Drude-Institut für Festkörperelektronik, 10117 Berlin, Germany
関連論文
- Surfaces and Interfaces of (Al, Ga) As Heterostructures on Unpatterned and Patterned GaAs Substrates
- Interface Characterization of Semiconductor Quantum Nanostructures ( Quantum Dot Structures)
- Self-Oscillations of the Current in Doped Semiconductor Superlattices
- Atomic Hydrogen Induced Step Bunching on High-Index GaAs Substrates for Fabrication of Novel Quantum Wire and Quantum Dot Arrays by Molecular Beam Epitaxy
- New Challenges for Deltalike Confinement of Impurities in GaAs
- Impurity-Induced Breakdown in GaAs with Partially Ordered Si-Doping
- Weak Antilocalization in Si δ-Doped In_xGa_As Systems
- 25p-YE-1 Highly uniform GaAs quantum wire and quantum dot arrays grown on patterned high-index substrates by hydrogen-assisted MBE
- Magnetotransport in Two Parallel Two-Dimensional Electron Gases Formed by a Delta-Doped Layer and a Heterojunction in GaAs
- Room Temperature Performance of (311) GaAs Quantum-Wire Structures
- High Carbon Doping of GaAs and AlAs in Distributed Bragg Reflectors
- Micro-Photoluminescence Study at Room Temperature of Sidewall Quantum Wires Formed on Patterned GaAs (311)A Substrates by Molecular Beam Epitaxy
- Long-range spin transport by acoustic fields in GaAs quantum wells
- Formation of a Monocrystalline, M-Plane AlN Layer by the Nitridation of \gamma-LiAlO2(100)
- Formation of a Monocrystalline, M-Plane AlN Layer by the Nitridation of γ-LiAlO_2(100)
- Spectral and Spatial Luminescence Distribution of m-Plane ZnO Epitaxial Films Containing Stacking Faults: A Cathodoluminescence Study