Spectral and Spatial Luminescence Distribution of m-Plane ZnO Epitaxial Films Containing Stacking Faults: A Cathodoluminescence Study

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概要

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• The luminescence of stacking faults (SFs) in m-plane ZnO epilayers grown by metal organic chemical vapor deposition is analyzed using spatially resolved cathodoluminescence (CL) spectroscopy. Complementary features observed in CL images for detection energies of 3.379 (near-band-edge) and 3.324 eV confirm the latter to be a typical SF-associated luminescence. A clear blue shift of the SF-associated luminescence is observed when the electron beam approaches the SF. This experimental result proves the existence of a polarization field in the SFs along the c-axis of the ZnO film. Furthermore, we clearly identify the SF-related transition at low temperatures and at room temperature.

• 2013-06-25

著者

• Grahn Holger

  Paul-drude-institut Fur Festkorperelektronik

• Wu Jih-jen

  Department Of Chemical Engineering National Cheng Kung University

• Chang Liuwen

  Department Of Materials And Optoelectronics Science Center For Nanoscience And Nanotechnology Nation

• Lin Wan-Hsien

  Paul-Drude-Institut für Festkörperelektronik, 10117 Berlin, Germany

• Jahn Uwe

  Paul-Drude-Institut für Festkörperelektronik, 10117 Berlin, Germany

• Chou Mitch

  Department of Materials Science and Opto-electronic Engineering, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan

• Chang Liuwen

  Department of Materials Science and Opto-electronic Engineering, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan

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