Formation of a Monocrystalline, M-Plane AlN Layer by the Nitridation of γ-LiAlO_2(100)
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概要
- 論文の詳細を見る
- 2012-10-25
著者
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Grahn Holger
Paul-drude-institut Fur Festkorperelektronik
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JENICHEN Bernd
Paul-Drude-Institut fur Festkorperelektronik
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TRAMPERT Achim
Paul-Drude-Institut fur Festkorperelektronik
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Kalisch Holger
Gan Device Technology Rwth Aachen University
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Vescan Andrei
Gan Device Technology Rwth Aachen University
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Wan Qian
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
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WOITOK Joachim
PANalytical B.V.
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WANG Kwang-Ru
Paul-Drude-Institut fur Festkorperelektronik
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MAUDER Christof
GaN Device Technology, RWTH Aachen
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HEUKEN Michael
GaN Device Technology, RWTH Aachen
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Wang Kwang-Ru
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
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WAN Qian
Paul-Drude-Institut fur Festkorperelektronik
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KALISCH Holger
GaN Device Technology, RWTH Aachen
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Jenichen Bernd
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
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- Formation of a Monocrystalline, M-Plane AlN Layer by the Nitridation of \gamma-LiAlO2(100)
- Formation of a Monocrystalline, M-Plane AlN Layer by the Nitridation of γ-LiAlO_2(100)
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