Self Assembled InAs/InP Quantum Dots for Telecom Applications in the 1.55 μm Wavelength Range: Wavelength Tuning, Stacking, Polarization Control, and Lasing

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概要

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• Wavelength-tunable InAs quantum dots (QDs) embedded in lattice-matched InGaAsP on InP(100) substrates are grown by metalorganic vapor-phase epitaxy (MOVPE). As/P exchange, which causes a QD size and an emission wavelength that are very large, is suppressed by decreasing the QD growth temperature and V–III flow ratio. As/P exchange, QD size and emission wavelength are then reproducibly controlled by the thickness of ultrathin [0–2 monolayers (ML)] GaAs interlayers underneath the QDs. Submonolayer GaAs coverages result in a shape transition from QDs to quantum dashes for a low V–III flow ratio. It is the combination of reduced growth temperature and V–III flow ratio with the insertion of GaAs interlayers of greater than 1 ML thickness which allows the tuning of the emission wavelength of QDs at room temperature in the 1.55 μm wavelength range. Temperature-dependent photoluminescence (PL) measurements reveal the excellent optical properties of the QDs. Widely stacked QD layers are reproduced with identical PL emission to increase the active volume while closely stacked QD layers reveal a systematic PL redshift and linewidth reduction due to vertical electronic coupling, which is proven by the fact that the linear polarization of the cleaved-side PL changes from in-plane to isotropic. Ridge-waveguide laser diodes with stacked QD layers for their active regions exhibit threshold currents at room temperature in continuous-wave mode that are among the lowest threshold currents achieved for InAs/InP QD lasers operating in the 1.55 μm wavelength range.

• 2006-08-30

著者

• Van Veldhoven

  Eitt/cobra Inter-university Research Institute Eindhoven University Of Technology

• Notzel Richard

  Eitt/cobra Inter-university Research Institute Eindhoven University Of Technology

• Van Otten

  Eitt/cobra Inter-university Research Institute Eindhoven University Of Technology

• TRAMPERT Achim

  Paul-Drude-Institut fur Festkorperelektronik

• Wolter Joachim

  Eitt/cobra Inter-university Research Institute Eindhoven University Of Technology

• De Vries

  Eitt/cobra Inter-university Research Institute Eindhoven University Of Technology

• de Vries

  eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

• van Veldhoven

  eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

• Smalbrugge Barry

  eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

• Bente Erwin

  eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

• Oei Yok-Siang

  eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

• Smit Meint

  eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

• Geluk Erik-Jan

  eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

• van Otten

  eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

• Barbarin Yohan

  eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

• Anantathanasarn Sanguan

  eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

• Eijkemans Tom

  eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

• Satpati Biswarup

  Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

• Satpati Biswarup

  Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

• Nötzel Richard

  eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

• Wolter Joachim

  eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

関連論文

• Wavelength Tunable (1.55μm Region) InAs/InGaAsP/InP (100) Quantum Dots in Telecom Laser Applications
• Micro-Photoluminescence Study at Room Temperature of Sidewall Quantum Wires Formed on Patterned GaAs (311)A Substrates by Molecular Beam Epitaxy
• Continuous Wavelength Tuning of InAs/InP Quantum Dots in the 1.55μm Region by Inserting Ultra-Thin GaAs and GaP Interlayers
• Self Assembled InAs/InP Quantum Dots for Telecom Applications in the 1.55 μm Wavelength Range: Wavelength Tuning, Stacking, Polarization Control, and Lasing
• Temperature-Dependent Photoluminescence of Self-Assembled (In,Ga)As Quantum Dots on GaAs (100): Carrier Redistribution through Low-Energy Continuous States
• Formation of a Monocrystalline, M-Plane AlN Layer by the Nitridation of \gamma-LiAlO2(100)
• Formation of a Monocrystalline, M-Plane AlN Layer by the Nitridation of γ-LiAlO_2(100)

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