Continuous Wavelength Tuning of InAs/InP Quantum Dots in the 1.55μm Region by Inserting Ultra-Thin GaAs and GaP Interlayers

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概要

• 論文の詳細を見る
• 2004-09-15

著者

• Notzel Richard

  Eitt/cobra Inter-university Research Institute Eindhoven University Of Technology

• Gong Qian

  Eitt/cobra Inter-university Research Institute Eindhoven University Of Technology

• Wolter Joachim

  Eitt/cobra Inter-university Research Institute Eindhoven University Of Technology

関連論文

• Continuous Wavelength Tuning of InAs/InP Quantum Dots in the 1.55μm Region by Inserting Ultra-Thin GaAs and GaP Interlayers
• Self Assembled InAs/InP Quantum Dots for Telecom Applications in the 1.55 μm Wavelength Range: Wavelength Tuning, Stacking, Polarization Control, and Lasing
• Temperature-Dependent Photoluminescence of Self-Assembled (In,Ga)As Quantum Dots on GaAs (100): Carrier Redistribution through Low-Energy Continuous States

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