Temperature-Dependent Photoluminescence of Self-Assembled (In,Ga)As Quantum Dots on GaAs (100): Carrier Redistribution through Low-Energy Continuous States

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概要

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• Temperature-dependent photoluminescence (PL) studies of an ensemble of self-assembled (In,Ga)As quantum dots (QDs) on GaAs (100) provide insight into the nature of the continuous states between the wetting layer (WL) and QDs. In addition to the well-known anomalous temperature dependence of the PL peak position and width around 90 K due to carrier (electron–hole pair) redistribution through the WL, we observe a similar behavior at much lower temperatures around 30 K. This behavior is attributed to carrier redistribution through the low-energy continuous states between the WL and QDs, directly proving their quasi-two-dimensional character. The smaller changes in the PL spectra than the WL-induced ones, however, indicate that the carrier redistribution and, thus, the spatial extent of the continuous states are restricted to a limited area around the QDs. This is also supported by the constant integrated PL intensity in this temperature range due to the absence of nonradiative recombination within these areas.

• 2005-09-15

著者

• Notzel Richard

  Eitt/cobra Inter-university Research Institute Eindhoven University Of Technology

• Gong Qian

  Eitt/cobra Inter-university Research Institute Eindhoven University Of Technology

• Wolter Joachim

  Eitt/cobra Inter-university Research Institute Eindhoven University Of Technology

• Eijkemans Tom

  eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

• Eijkemans Tom

  eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600MB Eindhoven, The Netherlands

• Mano Takaaki

  eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600MB Eindhoven, The Netherlands

• v. Lippen

  eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600MB Eindhoven, The Netherlands

• Hamhuis Gerrit

  eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600MB Eindhoven, The Netherlands

• Gong Qian

  eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600MB Eindhoven, The Netherlands

関連論文

• Continuous Wavelength Tuning of InAs/InP Quantum Dots in the 1.55μm Region by Inserting Ultra-Thin GaAs and GaP Interlayers
• Self Assembled InAs/InP Quantum Dots for Telecom Applications in the 1.55 μm Wavelength Range: Wavelength Tuning, Stacking, Polarization Control, and Lasing
• Temperature-Dependent Photoluminescence of Self-Assembled (In,Ga)As Quantum Dots on GaAs (100): Carrier Redistribution through Low-Energy Continuous States

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