Formation of a Monocrystalline, M-Plane AlN Layer by the Nitridation of \gamma-LiAlO2(100)

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概要

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• Using X-ray reflectivity (XRR) measurements and high-resolution transmission electron microscopy (HRTEM), we demonstrate that a thin AlN layer is formed on top of a \gamma-LiAlO2(100) substrate by a nitridation process using NH3 in a metal organic vapor phase epitaxy (MOVPE) reactor. This thin layer is identified to be monocrystalline, M-plane AlN, enabling the growth of nonpolar M-plane GaN on \gamma-LiAlO2(100) by MOVPE. HRTEM reveals that this thin nitridation layer is grown pseudomorphically without any detectable misfit dislocations.

• 2012-10-25

著者

• Grahn Holger

  Paul-drude-institut Fur Festkorperelektronik

• JENICHEN Bernd

  Paul-Drude-Institut fur Festkorperelektronik

• TRAMPERT Achim

  Paul-Drude-Institut fur Festkorperelektronik

• Kalisch Holger

  Gan Device Technology Rwth Aachen University

• Vescan Andrei

  Gan Device Technology Rwth Aachen University

• Wan Qian

  Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

• WOITOK Joachim

  PANalytical B.V.

• MAUDER Christof

  GaN Device Technology, RWTH Aachen

• HEUKEN Michael

  GaN Device Technology, RWTH Aachen

• Woitok Joachim

  PANalytical B.V., P. O. Box 13, 7600 AA Almelo, The Netherlands

• Wang Kwang-Ru

  Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

• Vescan Andrei

  GaN Device Technology, RWTH Aachen, Sommerfeldstr. 24, 52074 Aachen, Germany

• Jenichen Bernd

  Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

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