Kalisch Holger | Gan Device Technology Rwth Aachen University

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概要

• 同名の論文著者
• Gan Device Technology Rwth Aachen Universityの論文著者

関連著者

• Kalisch Holger

  Gan Device Technology Rwth Aachen University

• Vescan Andrei

  Gan Device Technology Rwth Aachen University

• Grahn Holger

  Paul-drude-institut Fur Festkorperelektronik

• JENICHEN Bernd

  Paul-Drude-Institut fur Festkorperelektronik

• TRAMPERT Achim

  Paul-Drude-Institut fur Festkorperelektronik

• Hahn Herwig

  Gan Device Technology Rwth Aachen University

• Wan Qian

  Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

• WOITOK Joachim

  PANalytical B.V.

• MAUDER Christof

  GaN Device Technology, RWTH Aachen

• HEUKEN Michael

  GaN Device Technology, RWTH Aachen

• Wang Kwang-Ru

  Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

• Jenichen Bernd

  Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

• LUKENS Gerrit

  GaN Device Technology, RWTH Aachen University

• KETTENISS Nico

  GaN Device Technology, RWTH Aachen University

• KALISCH Holger

  GaN Device Technology, RWTH Aachen University

• VESCAN Andrei

  GaN Device Technology, RWTH Aachen University

• Lukens Gerrit

  Gan Device Technology Rwth Aachen University

• Ketteniss Nico

  Gan Device Technology Rwth Aachen University

• WANG Kwang-Ru

  Paul-Drude-Institut fur Festkorperelektronik

• Woitok Joachim

  PANalytical B.V., P. O. Box 13, 7600 AA Almelo, The Netherlands

• WAN Qian

  Paul-Drude-Institut fur Festkorperelektronik

• Vescan Andrei

  GaN Device Technology, RWTH Aachen, Sommerfeldstr. 24, 52074 Aachen, Germany

• Kalisch Holger

  GaN Device Technology, RWTH Aachen University, 52074 Aachen, Germany

• KALISCH Holger

  GaN Device Technology, RWTH Aachen

• Reuters Benjamin

  GaN Device Technology, RWTH Aachen University, 52074 Aachen, Germany

• Pooth Alexander

  GaN Device Technology, RWTH Aachen University, 52074 Aachen, Germany

• Noculak Achim

  Chair of Electromagnetic Theory, RWTH Aachen University, 52074 Aachen, Germany

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著作論文

• Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance
• Formation of a Monocrystalline, M-Plane AlN Layer by the Nitridation of \gamma-LiAlO2(100)
• Formation of a Monocrystalline, M-Plane AlN Layer by the Nitridation of γ-LiAlO_2(100)
• First Small-Signal Data of GaN-Based p-Channel Heterostructure Field Effect Transistors

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