Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2011-11-25
著者
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Hahn Herwig
Gan Device Technology Rwth Aachen University
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LUKENS Gerrit
GaN Device Technology, RWTH Aachen University
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KETTENISS Nico
GaN Device Technology, RWTH Aachen University
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KALISCH Holger
GaN Device Technology, RWTH Aachen University
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VESCAN Andrei
GaN Device Technology, RWTH Aachen University
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Lukens Gerrit
Gan Device Technology Rwth Aachen University
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Ketteniss Nico
Gan Device Technology Rwth Aachen University
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Kalisch Holger
Gan Device Technology Rwth Aachen University
関連論文
- Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance
- Formation of a Monocrystalline, M-Plane AlN Layer by the Nitridation of \gamma-LiAlO2(100)
- Formation of a Monocrystalline, M-Plane AlN Layer by the Nitridation of γ-LiAlO_2(100)
- First Small-Signal Data of GaN-Based p-Channel Heterostructure Field Effect Transistors