First Small-Signal Data of GaN-Based p-Channel Heterostructure Field Effect Transistors

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概要

• 論文の詳細を見る

• p-Channel heterostructure field effect transistors (HFETs) have recently attracted increasing interest. They open up the possibility of fabricating nitride-based low-power complementary logic for operation in environments not accessible to other semiconductors. To date, several publications have dealt with DC data of p-channel GaN-based HFETs. However, small-signal data, which is important in terms of accessible operation frequencies, is missing. In this brief note, we report for the first time the small-signal characteristics and cut-off frequencies of a p-channel device.

• 2013-12-25

著者

• Hahn Herwig

  Gan Device Technology Rwth Aachen University

• Kalisch Holger

  Gan Device Technology Rwth Aachen University

• Vescan Andrei

  Gan Device Technology Rwth Aachen University

• Kalisch Holger

  GaN Device Technology, RWTH Aachen University, 52074 Aachen, Germany

• Reuters Benjamin

  GaN Device Technology, RWTH Aachen University, 52074 Aachen, Germany

• Pooth Alexander

  GaN Device Technology, RWTH Aachen University, 52074 Aachen, Germany

• Noculak Achim

  Chair of Electromagnetic Theory, RWTH Aachen University, 52074 Aachen, Germany

関連論文

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• Formation of a Monocrystalline, M-Plane AlN Layer by the Nitridation of \gamma-LiAlO2(100)
• Formation of a Monocrystalline, M-Plane AlN Layer by the Nitridation of γ-LiAlO_2(100)
• First Small-Signal Data of GaN-Based p-Channel Heterostructure Field Effect Transistors

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