High Carbon Doping of GaAs and AlAs in Distributed Bragg Reflectors

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概要

• 論文の詳細を見る
• 1995-08-21

著者

• Grahn Holger

  Paul-drude-institut Fur Festkorperelektronik

• HEY Rudolf

  Paul-Drude-Institut fur Festkorperelektronik

• Hey Rudolf

  Paul-drude Institut Fur Festkorperelektronik

• Mazuelas Angel

  Paul-drude-institut Fur Festkorperelektronik

• NORENBERG Holger

  Paul-Drude-Institut fur Festkorperelektronik

• JENICHEN Bernd

  Paul-Drude-Institut fur Festkorperelektronik

• Jenichen Bernd

  Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

関連論文

• Surfaces and Interfaces of (Al, Ga) As Heterostructures on Unpatterned and Patterned GaAs Substrates
• Self-Oscillations of the Current in Doped Semiconductor Superlattices
• Impurity-Induced Breakdown in GaAs with Partially Ordered Si-Doping
• Weak Antilocalization in Si δ-Doped In_xGa_As Systems
• High Carbon Doping of GaAs and AlAs in Distributed Bragg Reflectors
• Long-range spin transport by acoustic fields in GaAs quantum wells
• Formation of a Monocrystalline, M-Plane AlN Layer by the Nitridation of \gamma-LiAlO2(100)
• Formation of a Monocrystalline, M-Plane AlN Layer by the Nitridation of γ-LiAlO_2(100)
• Spectral and Spatial Luminescence Distribution of m-Plane ZnO Epitaxial Films Containing Stacking Faults: A Cathodoluminescence Study

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