Weak Antilocalization in Si δ-Doped In_xGa_<1-x>As Systems
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-04-15
著者
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Tarucha Seigo
Ntt Basic Research Laboratories
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Ploog Klaus
Paul-drude-institute For Solid State Electronics
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Ploog Klaus
Paul-drude-institut Fur Festkorperelektronik
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HEY Rudolf
Paul-Drude-Institut fur Festkorperelektronik
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Daweritz Lutz
Paul-Prude-Institut fur Festorperelektronik
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Takagaki Yukihiko
Ntt Basic Research Laboratories
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Daeweritz L
Paul Drude Inst. Solid State Electronics Berlin Deu
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Daweritz Lutz
Paul-drude-institut Fur Festkorperelektronik
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Ploog Klaus
Paul-drude-institut Feur Festkoerperelektronik Berlin Germany
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Hey Rudolf
Paul-drude Institut Fur Festkorperelektronik
関連論文
- Surfaces and Interfaces of (Al, Ga) As Heterostructures on Unpatterned and Patterned GaAs Substrates
- Interface Characterization of Semiconductor Quantum Nanostructures ( Quantum Dot Structures)
- Self-Oscillations of the Current in Doped Semiconductor Superlattices
- Atomic Hydrogen Induced Step Bunching on High-Index GaAs Substrates for Fabrication of Novel Quantum Wire and Quantum Dot Arrays by Molecular Beam Epitaxy
- New Challenges for Deltalike Confinement of Impurities in GaAs
- Multiple Photon Assisted Tunneling between Two Coupled Quantum Dots ( Quantum Dot Structures)
- Impurity-Induced Breakdown in GaAs with Partially Ordered Si-Doping
- In Situ Controlled Growth of Low-Temperature GaAs and Its Application for Mode-Locking Devices
- Low-Temperature-Grown GaAs-In Situ Characterization and Application
- High-Mobility Inverted Modulation-Doped GaAs/AlGaAs Heterostructures
- Several- and Many-Electron Artificial-Atoms at Filling Factors between 2 and 1
- Gate Performance in Resonant Tunneling Single Electron Transistor (Special Issue on Technology Challenges for Single Electron Devices)
- Technologies for Artificial Semiconductor Atoms
- Vertical Single Electron Transistors With Separate Gates ( Quantum Dot Structures)
- Atomic-Like Properties of Semiconductor Quantum Dots ( Quantum Dot Structures)
- GaAs/AlGaAs/InGaAs Vertical Triple Barrier Single Electron Transistors
- GaAs/AlGaAs/InGaAs Vertical Triple Barrier Single Electron Transistors
- Sub-Micron Vertical AlGaAs/GaAs Resornarnt Tunneling Single Electron Transistor
- Quantized Conductance Observed in Quantum Wires 2 to 10 μm Long
- Weak Antilocalization in Si δ-Doped In_xGa_As Systems
- 25p-YE-1 Highly uniform GaAs quantum wire and quantum dot arrays grown on patterned high-index substrates by hydrogen-assisted MBE
- Magnetotransport in Two Parallel Two-Dimensional Electron Gases Formed by a Delta-Doped Layer and a Heterojunction in GaAs
- Room Temperature Performance of (311) GaAs Quantum-Wire Structures
- Multiple Gated InAs Dot Ensembles
- Electrical Pump and Probe Measurements of a Quantum Dot in the Coulomb Blockade Regime
- Transport Properties of Modulation-Doped Structures Grown by Molecular Beam Epitaxy after Focused Ion Beam Implantation
- 25p-YG-4 Internal Magnetic Focusing in an Array of Ballistic Cavities
- Quantized Conductance in InGaAs Point Contacts at High Temperatures
- Resonant Tunneling Properties of Single Electron Transistors with a Novel Double-Gate Geometry
- High-Mobility Quantum Wires Fabricated by Ga Focused Ion Beam Shallow Implantation
- 25p-YG-4 Internal Magnetic Focusing in an Array of Ballistic Cavities
- Hot Electron Ballistic Transport in Small Four-Terminal n-AlGaAs/InGaAs/GaAs Structures
- Internal Magnetic Focusing in an Array of Open Quantum Dots
- Regulated Single Electron to Single Photon Conversion in a Constant-Current-Driven pn Microjunction
- High Carbon Doping of GaAs and AlAs in Distributed Bragg Reflectors
- Micro-Photoluminescence Study at Room Temperature of Sidewall Quantum Wires Formed on Patterned GaAs (311)A Substrates by Molecular Beam Epitaxy
- Long-range spin transport by acoustic fields in GaAs quantum wells
- A Double Quantum Dot as an Artificial Two-Level System