Low-Temperature-Grown GaAs-In Situ Characterization and Application
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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Ploog K
Paul Drude Inst. Solid State Electronics Berlin Deu
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Ploog K.h.
Paul-drude-institut Fur Festkorperelektronik
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Ploog K.
Paul-drude-institut Fuer Festkoerperelektronik Hausvogteiplatz 5-7 10117 Berlin Deu
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Daeweritz L
Paul Drude Inst. Solid State Electronics Berlin Deu
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Kostial H
Paul‐drude‐inst. Festkoerperelektronik Berlin Deu
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HERFORT J.
Paul-Drude-Institut fur Festkorperelektronik
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APOSTOLOPOULOS G.
Paul-Drude-Institut fur Festkorperelektronik
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KOSTIAL H.
Paul-Drude-Institut fur Festkorperelektronik
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ULRICI W.
Paul-Drude-Institut fur Festkorperelektronik
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DAWERITZ L.
Paul-Drude-Institut fur Festkorperelektronik
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LEITNER M.
Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie
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GLAS P.
Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie
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FRIEDLANG K.-J.
Paul-Drude-Institut fur Festkorperelektronik
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Kostial H.
Paul-drude-institut Fur Festkoerperelektronik
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Friedland K‐j
Paul Drude Institute For Solid State Electronics
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- Nonuniversal Magnetic-Field Correlation of Conductance Fluctuations in Quantum Cavities Attached to a Superconductor : Condensed Matter: Electronic Properties, etc.
- Impurity-Induced Breakdown in GaAs with Partially Ordered Si-Doping
- In Situ Controlled Growth of Low-Temperature GaAs and Its Application for Mode-Locking Devices
- Low-Temperature-Grown GaAs-In Situ Characterization and Application
- Reduction of Remote Impurity Scattering in Heavy Modulation-Doped GaAs and (GaIn)As Quantum Wells with AlAs/GaAs Type-II-Superlattice Barriers
- Weak Antilocalization in Si δ-Doped In_xGa_As Systems
- Magnetotransport in Two Parallel Two-Dimensional Electron Gases Formed by a Delta-Doped Layer and a Heterojunction in GaAs
- A New Route to Reduce Remote Impurity Scattering in Modulation Doped Quantum Wells with Very High Conductivity
- Phonon Scattering by V^ Ions in GaAs : Evidence of a Low-Spin System : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Metals and Semiconductors