ULRICI W. | Paul-Drude-Institut fur Festkorperelektronik
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概要
関連著者
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ULRICI W.
Paul-Drude-Institut fur Festkorperelektronik
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Ploog K
Paul Drude Inst. Solid State Electronics Berlin Deu
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Ploog K.h.
Paul-drude-institut Fur Festkorperelektronik
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Daeweritz L
Paul Drude Inst. Solid State Electronics Berlin Deu
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Kostial H
Paul‐drude‐inst. Festkoerperelektronik Berlin Deu
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HERFORT J.
Paul-Drude-Institut fur Festkorperelektronik
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APOSTOLOPOULOS G.
Paul-Drude-Institut fur Festkorperelektronik
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KOSTIAL H.
Paul-Drude-Institut fur Festkorperelektronik
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DAWERITZ L.
Paul-Drude-Institut fur Festkorperelektronik
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LEITNER M.
Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie
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GLAS P.
Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie
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Kostial H.
Paul-drude-institut Fur Festkoerperelektronik
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Friedland K‐j
Paul Drude Institute For Solid State Electronics
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Ploog K.
Paul-drude-institut Fuer Festkoerperelektronik Hausvogteiplatz 5-7 10117 Berlin Deu
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Salce B.
Centre D'etudes Nucleaires De Grenoble Service Des Basses Temperatures
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FRIEDLAND K.-J.
Paul-Drude-Institut fur Festkorperelektronik
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FRIEDLANG K.-J.
Paul-Drude-Institut fur Festkorperelektronik
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Ploog K.h.
Paul-drude-institut Fur Festkoerperelektronik
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Ulrici W.
Akademie Der Wissenschaften Der Ddr
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BUTLER N.
Department of Physics, University of Nottingham
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CHALLIS L.J.
Department of Physics, University of Nottingham
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SAHRAOUI-TAHAR M.
Department of Physics, University of Nottingham
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Challis L.j.
Department Of Physics University Of Nottingham
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Sahraoui-tahar M.
Department Of Physics University Of Nottingham
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Butler N.
Department Of Physics University Of Nottingham
著作論文
- In Situ Controlled Growth of Low-Temperature GaAs and Its Application for Mode-Locking Devices
- Low-Temperature-Grown GaAs-In Situ Characterization and Application
- Phonon Scattering by V^ Ions in GaAs : Evidence of a Low-Spin System : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Metals and Semiconductors