Phonon Scattering by V^<2+> Ions in GaAs : Evidence of a Low-Spin System : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Metals and Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-08-19
著者
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Salce B.
Centre D'etudes Nucleaires De Grenoble Service Des Basses Temperatures
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ULRICI W.
Paul-Drude-Institut fur Festkorperelektronik
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Ulrici W.
Akademie Der Wissenschaften Der Ddr
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BUTLER N.
Department of Physics, University of Nottingham
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CHALLIS L.J.
Department of Physics, University of Nottingham
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SAHRAOUI-TAHAR M.
Department of Physics, University of Nottingham
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Challis L.j.
Department Of Physics University Of Nottingham
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Sahraoui-tahar M.
Department Of Physics University Of Nottingham
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Butler N.
Department Of Physics University Of Nottingham
関連論文
- In Situ Controlled Growth of Low-Temperature GaAs and Its Application for Mode-Locking Devices
- Low-Temperature-Grown GaAs-In Situ Characterization and Application
- Phonon Scattering by V^ Ions in GaAs : Evidence of a Low-Spin System : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Metals and Semiconductors