Reduction of Remote Impurity Scattering in Heavy Modulation-Doped GaAs and (GaIn)As Quantum Wells with AlAs/GaAs Type-II-Superlattice Barriers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-03-30
著者
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Ploog K.h.
Paul-drude-institut Fur Festkorperelektronik
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KOSTIAL H.
Paul-Drude-Institut fur Festkorperelektronik
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Ploog K.h.
Paul-drude-institut Fur Festkoerperelektronik
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Kostial H.
Paul-drude-institut Fur Festkoerperelektronik
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FRIEDLAND Klaus-Juergen
Paul-Drude-Institut fur Festkoerperelektronik
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HEY R.
Paul-Drude-Institut fur Festkoerperelektronik
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- In Situ Controlled Growth of Low-Temperature GaAs and Its Application for Mode-Locking Devices
- Low-Temperature-Grown GaAs-In Situ Characterization and Application
- Reduction of Remote Impurity Scattering in Heavy Modulation-Doped GaAs and (GaIn)As Quantum Wells with AlAs/GaAs Type-II-Superlattice Barriers
- A New Route to Reduce Remote Impurity Scattering in Modulation Doped Quantum Wells with Very High Conductivity