Technologies for Artificial Semiconductor Atoms

概要

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With their well defined heterostructure tunneling barriers, we have recently demonstrated that vertical single electron transistors (SET's) can be utilized to study the properties of artificial semiconductor atoms. Investigation of Coulomb blockade oscillations for a single disk-shaped InGaAs dot embedded in a vertical SET reveals a "shell" structure, a pairing due to spin degeneracy, and even modifications in line with Hund's rule. These atomic-like properties are associated with the rotational symmetry of the lateral confining potential. For each electron in the dot we are able to identify all the quantum numbers of the single-particle states. The vertical single electron transistor is therefore a device whose transport properties are determined strongly by the quantum numbers of zero dimensional electron states.
社団法人電子情報通信学会の論文
1997-08-13