Resonant Tunneling Properties of Single Electron Transistors with a Novel Double-Gate Geometry
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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Tarucha Seigo
Ntt Basic Research Laboratories
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FUJISAWA Toshimasa
NTT Basic Research Laboratories, NTT Corporation
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Fujisawa Toshimasa
Ntt Basic Research Laboratories
関連論文
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- Spin-conserved Single-electron Transport between Zeeman Sublevels in a Few-electron Quantum Dot
- Electrostatic coupling between two double-quantum dots studies by resonant tunneling current
- Long Spin Relaxation Time Observed in a Lateral Quantum Dot
- Multiple Photon Assisted Tunneling between Two Coupled Quantum Dots ( Quantum Dot Structures)
- High-Mobility Inverted Modulation-Doped GaAs/AlGaAs Heterostructures
- Several- and Many-Electron Artificial-Atoms at Filling Factors between 2 and 1
- Gate Performance in Resonant Tunneling Single Electron Transistor (Special Issue on Technology Challenges for Single Electron Devices)
- Technologies for Artificial Semiconductor Atoms
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- Atomic-Like Properties of Semiconductor Quantum Dots ( Quantum Dot Structures)
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- Sub-Micron Vertical AlGaAs/GaAs Resornarnt Tunneling Single Electron Transistor
- Quantized Conductance Observed in Quantum Wires 2 to 10 μm Long
- 24pYT-2 Spin Blockade in the Cotunneling Regime through a Dobule Quantum Dot
- A Triple Quantum Dot in a Single Wall Carbon Nanotube
- Weak Antilocalization in Si δ-Doped In_xGa_As Systems
- Multiple Gated InAs Dot Ensembles
- Electrical Pump and Probe Measurements of a Quantum Dot in the Coulomb Blockade Regime
- Transport Properties of Modulation-Doped Structures Grown by Molecular Beam Epitaxy after Focused Ion Beam Implantation
- 25p-YG-4 Internal Magnetic Focusing in an Array of Ballistic Cavities
- Quantized Conductance in InGaAs Point Contacts at High Temperatures
- Resonant Tunneling Properties of Single Electron Transistors with a Novel Double-Gate Geometry
- High-Mobility Quantum Wires Fabricated by Ga Focused Ion Beam Shallow Implantation
- 25p-YG-4 Internal Magnetic Focusing in an Array of Ballistic Cavities
- Hot Electron Ballistic Transport in Small Four-Terminal n-AlGaAs/InGaAs/GaAs Structures
- Internal Magnetic Focusing in an Array of Open Quantum Dots
- Regulated Single Electron to Single Photon Conversion in a Constant-Current-Driven pn Microjunction
- Coherence Time of Nuclear Spins in GaAs Quantum Well Probed by Submicron-Scale All-Electrical Nuclear Magnetic Resonance Device
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- Transmission Type Rf Single Electron Transistor Operation of a Semiconductor Quantum Dot
- Quantum information devices based on semiconductor quantum dots
- Real-Time Observation of Charge States and Energy Relaxation in a Double Quantum Dot
- A Double Quantum Dot as an Artificial Two-Level System
- Time-Dependent Local Potential Induced by Scanning Gate Microscopy
- Spin-Conserved Single-Electron Transport between Zeeman Sublevels in a Few-Electron Quantum Dot
- Correlation Measurement of Time-Dependent Potentials in a Semiconductor Quantum Point Contact