Time-Dependent Local Potential Induced by Scanning Gate Microscopy
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概要
- 論文の詳細を見る
We have developed a new high-frequency scanning gate microscopy (HF-SGM), in which high-frequency electrical signals can be applied on the conductive tip of an atomic force microscope (AFM). The high-frequency characteristics are investigated by correlation measurement on a semiconductor quantum point contact (QPC). The time-dependent potential of the tunneling barrier is induced from the AFM tip and probed with another voltage pulse applied on the source electrode. The measurement indicates that an electrical pulse as short as 5 ns can be applied without significant distortion. The demonstrated HF-SGM would allow us to investigate the dynamic response from various nanostructures.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
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Ota Takeshi
Ntt Basic Research Laboratories Ntt Corporation
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Fujisawa Toshimasa
Ntt Basic Research Laboratories
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Wang Zhenzhong
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Chen Dongmin
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
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