Transport Properties of Modulation-Doped Structures Grown by Molecular Beam Epitaxy after Focused Ion Beam Implantation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-01-30
著者
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Fujisawa Toshio
Faculty Of Engineering Tokyo Institute Of Technology
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Tarucha S
Ntt Basic Res. Lab. Kanagawa Jpn
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Tarucha Seigo
Ntt Basic Research Laboratories
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Itoh M
Institute Of Applied Physics University Of Tsukuba
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Itoh M
Institute Of Industrial Science University Of Tokyo
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FUJISAWA Toshimasa
NTT Basic Research Laboratories, NTT Corporation
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HIRAYAMA Yoshiro
NTT Basic Research Laboratories, NTT Corporation
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Itoh M
Research Laboratory Of Engineering Materials Tokyo Institute Of Technology
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Tarucha Seigo
Ntt Basic Research Laboratories Ntt Corporation
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Tarucha Seigo
Ntt Basic Research Laboratories:department Of Physics University Of Tokyo
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Tarucha Seigo
Ntt Electrical Communications Laboratories
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SAKU Tadashi
NTT Basic Research Laboratories
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Fujisawa Takeshi
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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Itoh Masayuki
Ntt Basic Research Laboratories
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Tarucha S
Ntt Basic Research Laboratories Ntt Corporation
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Hirayama Y
Ntt Corp. Kanagawa Jpn
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Hirayama Yoshiro
Ntt Basic Research Laboratories
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Fujisawa Toshimasa
Ntt Basic Research Laboratories
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Hirayama Y
Ntt Basic Research Laboratories Ntt Corporation
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