Several- and Many-Electron Artificial-Atoms at Filling Factors between 2 and 1
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-01-30
著者
-
Tarucha S
Ntt Basic Res. Lab. Kanagawa Jpn
-
Tarucha Seigo
Ntt Basic Research Laboratories
-
Austing Guy
Ntt Basic Research Laboratories
-
TOKURA Yasuhiro
NTT Basic Research Laboratories
-
Tarucha Seigo
Ntt Basic Research Laboratories Ntt Corporation
-
Honda T
Kohgakuin Univ. Tokyo Jpn
-
Kouwenhoven Leo
Department Of Applied Physics And Dimes Delft University Of Technology
-
Kouwenhoven Leo
Department Of Applied Physics Delft University Of Technology
-
Tarucha Seigo
Ntt Basic Research Laboratories:department Of Physics University Of Tokyo
-
Tarucha Seigo
Ntt Electrical Communications Laboratories
-
HONDA Takashi
NTT Basic Research Laboratories
-
DANOESASTRO Martin
Department of Applied Physics, Delft University of Technology
-
JANSSEN Jorg
Department of Applied Physics, Delft University of Technology
-
OOSTERKAMP Tjerk
Department of Applied Physics, Delft University of Technology
-
Tarucha S
Ntt Basic Research Laboratories Ntt Corporation
-
Janssen Jorg
Department Of Applied Physics Delft University Of Technology
-
Tokura Y
Ntt Basic Research Laboratories
-
Tokura Yasuhiro
Ntt Bacic Research Laboratories Ntt Corporation
-
Oosterkamp Tjerk
Department Of Applied Physics And Dimes Delft University Of Technology
-
Oosterkamp Tjerk
Department Of Applied Physics Delft University Of Technology
-
Danoesastro Martin
Department Of Applied Physics Delft University Of Technology
関連論文
- Absorption Saturation of Excitons in GaAs-AlAs Multi-Quantum-Well Structures
- Superlattice Structure Observation for (AlAs) _(GaAs)_ Grown on (001) Vicinal GaAs Substrates : Semiconductors and Semiconductors Devices
- Multiple Photon Assisted Tunneling between Two Coupled Quantum Dots ( Quantum Dot Structures)
- Observation of Room Temperature Excitons in GaSb-AlGaSb Multi-Quantum Wells
- Compositional Disordering of GaAs-Al_xGa_As Superlattice by Ga Focused Ion Beam Implantation and its Application to Submicron Structure Fabrication
- High-Mobility Inverted Modulation-Doped GaAs/AlGaAs Heterostructures
- Waveguide-Type Optical Modulator of GaAs Quantum Well Double Heterostructures Using Electric Field Effect on Exciton Absorption
- Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures
- Room Temperature Operation of Al_Ga_Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy
- A Segmented Electrode Multi-Quantum-Well Laser Diode
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs-GaAs Superlattices
- Optical Absorption Characteristics of GaAs-AlGaAs Multi-Quantum-Well Heterostructure Waveguides
- Several- and Many-Electron Artificial-Atoms at Filling Factors between 2 and 1
- Gate Performance in Resonant Tunneling Single Electron Transistor (Special Issue on Technology Challenges for Single Electron Devices)
- Technologies for Artificial Semiconductor Atoms
- Vertical Single Electron Transistors With Separate Gates ( Quantum Dot Structures)
- Atomic-Like Properties of Semiconductor Quantum Dots ( Quantum Dot Structures)
- GaAs/AlGaAs/InGaAs Vertical Triple Barrier Single Electron Transistors
- GaAs/AlGaAs/InGaAs Vertical Triple Barrier Single Electron Transistors
- Sub-Micron Vertical AlGaAs/GaAs Resornarnt Tunneling Single Electron Transistor
- Quantized Conductance Observed in Quantum Wires 2 to 10 μm Long
- Coupling Characteristics of Semiconductor Coupled Quantum Dots in Coulomb Blockade Regime
- Effect of Microwave Irradiations on Coupled Quantum Dots
- Weak Antilocalization in Si δ-Doped In_xGa_As Systems
- Multiple Gated InAs Dot Ensembles
- Electrical Pump and Probe Measurements of a Quantum Dot in the Coulomb Blockade Regime
- Transport Properties of Modulation-Doped Structures Grown by Molecular Beam Epitaxy after Focused Ion Beam Implantation
- 31a-N-3 Resistance oscillations in wires with FIB-induced line-ordered scatterers
- 31a-N-3 Resistance oscillations in wires with FIB-induced line-ordered scatterers
- 7p-N-7 Magnetoresistance Oscillations in a Magnetic Micro-cavity and Magnetic Antidot
- 25p-YG-4 Internal Magnetic Focusing in an Array of Ballistic Cavities
- Quantized Conductance in InGaAs Point Contacts at High Temperatures
- Resonant Tunneling Properties of Single Electron Transistors with a Novel Double-Gate Geometry
- High-Mobility Quantum Wires Fabricated by Ga Focused Ion Beam Shallow Implantation
- Basic Properties of Magnetostrictive Actuators Using Tb-Fe and Sm-Fe Thin Films (Special Issue on Micromachine Technology)
- 25p-YG-4 Internal Magnetic Focusing in an Array of Ballistic Cavities
- Hot Electron Ballistic Transport in Small Four-Terminal n-AlGaAs/InGaAs/GaAs Structures
- Internal Magnetic Focusing in an Array of Open Quantum Dots
- The Kondo Effect Enhanced by State Degeneracy(Kondo Effect-40 Years after the Discovery)
- Regulated Single Electron to Single Photon Conversion in a Constant-Current-Driven pn Microjunction
- Rectifying Behavior in Laterally Coupled Self-Assembled Quantum Dots with Asymmetric Tunneling Barriers
- Level Broadening Effect in Electron Tunneling through Double Quantum Dots with Different $g$ Factors
- Field demonstration of differential-phase-shift QKD system over 90-km link under the framework of Tokyo QKD Network (光通信システム)
- Limit of Electron Mobility in AlGaAs/GaAs Modulation-doped Heterostructures
- Effect of Multiple Charge Traps on Dephasing Rates of a Josephson Charge Qubit System
- Self-Limited Facet Growth for GaAs Tetrahedral Quantum Dots
- Many-Body Effects on Tunneling of Electrons in Magnetic-Field-induced Quasi-One-dimensional Electron Systems in Semiconductor Nanowhiskers(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Carrier Concentration in Quantum Wires Fabricated by Ractive Ion Beam Etching
- Pauli Spin Blockade and Influence of Hyperfine Interaction in Vertical Quantum Dot Molecule with Six-Electrons
- A Double Quantum Dot as an Artificial Two-Level System
- Superconducting Nanowire Single-Photon Detector with Ultralow Dark Count Rate Using Cold Optical Filters
- Coupling Characteristics of Semiconductor Coupled Quantum Dots in Coulomb Blockade Regime
- Many-Body Effects on Tunneling of Electrons in Magnetic-Field-induced Quasi-One-dimensional Electron Systems in Semiconductor Nanowhiskers(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Fabrication of MgB_2 Nanowire Single-Photon Detector with Meander Structure