Coupling Characteristics of Semiconductor Coupled Quantum Dots in Coulomb Blockade Regime
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概要
- 論文の詳細を見る
Coupled quantum dots in series have been realized in two dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures using the surface gate, and transport measurements have been performed at the dilution refrigerator temperature. The electrical transport was found to be determined by the Coulomb blockade and the resonant tunneling. The energy width of the resonant peak can be smaller than the thermal energy when two dots are sufficiently isolated. The charge stability diagram, by changing two gates attached to each dot, was measured for weak and strong coupling conditions. The width of the current resonant peak changed significantly as the coupling was increased, while the capacitive coupling did not change so much. The experimental result was analyzed using a simple capacitance model.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1998-12-30
著者
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Ishibashi Koji
Department Of Applied Physics And Dimes Delft University Of Technology:the Institute Of Physical And
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Kouwenhoven Leo
Department Of Applied Physics And Dimes Delft University Of Technology
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HIJMAN Remko
Department of Applied Physics and Delft Institute of Microelectronics and Submicron Technology (DIME
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Oosterkamp Tjerk
Department Of Applied Physics And Dimes Delft University Of Technology
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Kouwenhoven Leo
Department of Applied Physics and DIMES, Delft University of Technology, POB. 5046, 2600GA Delft, The Netherlands
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Hijman Remko
Department of Applied Physics and DIMES, Delft University of Technology, POB. 5046, 2600GA Delft, The Netherlands
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Ishibashi Koji
Department of Applied Physics and DIMES, Delft University of Technology, POB. 5046, 2600GA Delft, The Netherlands
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