Carrier Concentration in Quantum Wires Fabricated by Ractive Ion Beam Etching
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概要
- 論文の詳細を見る
High-quality quantum wires with a submicron width are fabricated by a combination of electron beam lithography and selective etching by reactive ion beam etching. The carrier concentrations in these wires are evaluated as a function of gate voltage by analyzing the magnetic depopulation effect observed in the quantum wire resistance. This analysis assumes a parabolic potential profile for the wire constriction. The quantum wire capacitance calculated from the carrier concentration agrees well with the capacitance measured by the 1-MHz capacitance meter. This agreement confirmes that the carrier concentration derived from the magnetoresistance gives a good estimation to the actual quasi 1-dimensional concentration,
- 社団法人応用物理学会の論文
- 1991-10-15
著者
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椿 光太郎
東洋大学工学部
-
HONDA Takashi
NTT Basic Research Laboratories
-
Itoh Masayuki
Ntt Basic Research Laboratories
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TSUBAKI Kotaro
NTT Basic Research Laboratories, Physical Science Laboratory
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Tsubaki Kotaro
NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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