Sub-Micron Vertical AlGaAs/GaAs Resornarnt Tunneling Single Electron Transistor

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-02-28

著者

• Tarucha S

  Ntt Basic Res. Lab. Kanagawa Jpn

• Tarucha Seigo

  Ntt Basic Research Laboratories

• Austing David

  Ntt Basic Research Laboratories

• TOKURA Yasuhiro

  NTT Basic Research Laboratories

• Tarucha Seigo

  Ntt Basic Research Laboratories Ntt Corporation

• Honda T

  Kohgakuin Univ. Tokyo Jpn

• Tarucha Seigo

  Ntt Basic Research Laboratories:department Of Physics University Of Tokyo

• Tarucha Seigo

  Ntt Electrical Communications Laboratories

• HONDA Takashi

  NTT Basic Research Laboratories

• Tarucha S

  Ntt Basic Research Laboratories Ntt Corporation

• Tokura Y

  Ntt Basic Research Laboratories

• Tokura Yasuhiro

  Ntt Bacic Research Laboratories Ntt Corporation

関連論文

• Absorption Saturation of Excitons in GaAs-AlAs Multi-Quantum-Well Structures
• Superlattice Structure Observation for (AlAs) _(GaAs)_ Grown on (001) Vicinal GaAs Substrates : Semiconductors and Semiconductors Devices
• Multiple Photon Assisted Tunneling between Two Coupled Quantum Dots ( Quantum Dot Structures)
• Observation of Room Temperature Excitons in GaSb-AlGaSb Multi-Quantum Wells
• Compositional Disordering of GaAs-Al_xGa_As Superlattice by Ga Focused Ion Beam Implantation and its Application to Submicron Structure Fabrication
• High-Mobility Inverted Modulation-Doped GaAs/AlGaAs Heterostructures
• Waveguide-Type Optical Modulator of GaAs Quantum Well Double Heterostructures Using Electric Field Effect on Exciton Absorption
• Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures
• Room Temperature Operation of Al_Ga_Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy
• A Segmented Electrode Multi-Quantum-Well Laser Diode
• Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs-GaAs Superlattices
• Optical Absorption Characteristics of GaAs-AlGaAs Multi-Quantum-Well Heterostructure Waveguides
• Several- and Many-Electron Artificial-Atoms at Filling Factors between 2 and 1
• Gate Performance in Resonant Tunneling Single Electron Transistor (Special Issue on Technology Challenges for Single Electron Devices)
• Technologies for Artificial Semiconductor Atoms
• Vertical Single Electron Transistors With Separate Gates ( Quantum Dot Structures)
• Atomic-Like Properties of Semiconductor Quantum Dots ( Quantum Dot Structures)
• GaAs/AlGaAs/InGaAs Vertical Triple Barrier Single Electron Transistors
• GaAs/AlGaAs/InGaAs Vertical Triple Barrier Single Electron Transistors
• Sub-Micron Vertical AlGaAs/GaAs Resornarnt Tunneling Single Electron Transistor
• Quantized Conductance Observed in Quantum Wires 2 to 10 μm Long
• Weak Antilocalization in Si δ-Doped In_xGa_As Systems
• Multiple Gated InAs Dot Ensembles
• Electrical Pump and Probe Measurements of a Quantum Dot in the Coulomb Blockade Regime
• Transport Properties of Modulation-Doped Structures Grown by Molecular Beam Epitaxy after Focused Ion Beam Implantation
• 31a-N-3 Resistance oscillations in wires with FIB-induced line-ordered scatterers
• 31a-N-3 Resistance oscillations in wires with FIB-induced line-ordered scatterers
• 7p-N-7 Magnetoresistance Oscillations in a Magnetic Micro-cavity and Magnetic Antidot
• 25p-YG-4 Internal Magnetic Focusing in an Array of Ballistic Cavities
• Quantized Conductance in InGaAs Point Contacts at High Temperatures
• Resonant Tunneling Properties of Single Electron Transistors with a Novel Double-Gate Geometry
• High-Mobility Quantum Wires Fabricated by Ga Focused Ion Beam Shallow Implantation
• Basic Properties of Magnetostrictive Actuators Using Tb-Fe and Sm-Fe Thin Films (Special Issue on Micromachine Technology)
• 25p-YG-4 Internal Magnetic Focusing in an Array of Ballistic Cavities
• Hot Electron Ballistic Transport in Small Four-Terminal n-AlGaAs/InGaAs/GaAs Structures
• Internal Magnetic Focusing in an Array of Open Quantum Dots
• The Kondo Effect Enhanced by State Degeneracy(Kondo Effect-40 Years after the Discovery)
• Regulated Single Electron to Single Photon Conversion in a Constant-Current-Driven pn Microjunction
• Rectifying Behavior in Laterally Coupled Self-Assembled Quantum Dots with Asymmetric Tunneling Barriers
• Level Broadening Effect in Electron Tunneling through Double Quantum Dots with Different $g$ Factors
• Field demonstration of differential-phase-shift QKD system over 90-km link under the framework of Tokyo QKD Network (光通信システム)
• Limit of Electron Mobility in AlGaAs/GaAs Modulation-doped Heterostructures
• Effect of Multiple Charge Traps on Dephasing Rates of a Josephson Charge Qubit System
• Self-Limited Facet Growth for GaAs Tetrahedral Quantum Dots
• Many-Body Effects on Tunneling of Electrons in Magnetic-Field-induced Quasi-One-dimensional Electron Systems in Semiconductor Nanowhiskers(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Carrier Concentration in Quantum Wires Fabricated by Ractive Ion Beam Etching
• Pauli Spin Blockade and Influence of Hyperfine Interaction in Vertical Quantum Dot Molecule with Six-Electrons
• A Double Quantum Dot as an Artificial Two-Level System
• Superconducting Nanowire Single-Photon Detector with Ultralow Dark Count Rate Using Cold Optical Filters
• Many-Body Effects on Tunneling of Electrons in Magnetic-Field-induced Quasi-One-dimensional Electron Systems in Semiconductor Nanowhiskers(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Fabrication of MgB_2 Nanowire Single-Photon Detector with Meander Structure

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