GaAs/AlGaAs/InGaAs Vertical Triple Barrier Single Electron Transistors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-03-30
著者
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Tarucha S
Ntt Basic Res. Lab. Kanagawa Jpn
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Tarucha Seigo
Ntt Basic Research Laboratories
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Austing David
Ntt Basic Research Laboratories
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Tarucha Seigo
Ntt Basic Research Laboratories Ntt Corporation
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Honda T
Kohgakuin Univ. Tokyo Jpn
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Tarucha Seigo
Ntt Basic Research Laboratories:department Of Physics University Of Tokyo
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Tarucha Seigo
Ntt Electrical Communications Laboratories
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HONDA Takashi
NTT Basic Research Laboratories
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Tarucha S
Ntt Basic Research Laboratories Ntt Corporation
関連論文
- Absorption Saturation of Excitons in GaAs-AlAs Multi-Quantum-Well Structures
- Multiple Photon Assisted Tunneling between Two Coupled Quantum Dots ( Quantum Dot Structures)
- Observation of Room Temperature Excitons in GaSb-AlGaSb Multi-Quantum Wells
- Compositional Disordering of GaAs-Al_xGa_As Superlattice by Ga Focused Ion Beam Implantation and its Application to Submicron Structure Fabrication
- High-Mobility Inverted Modulation-Doped GaAs/AlGaAs Heterostructures
- Waveguide-Type Optical Modulator of GaAs Quantum Well Double Heterostructures Using Electric Field Effect on Exciton Absorption
- Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures
- Room Temperature Operation of Al_Ga_Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy
- A Segmented Electrode Multi-Quantum-Well Laser Diode
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs-GaAs Superlattices
- Optical Absorption Characteristics of GaAs-AlGaAs Multi-Quantum-Well Heterostructure Waveguides
- Several- and Many-Electron Artificial-Atoms at Filling Factors between 2 and 1
- Gate Performance in Resonant Tunneling Single Electron Transistor (Special Issue on Technology Challenges for Single Electron Devices)
- Technologies for Artificial Semiconductor Atoms
- Vertical Single Electron Transistors With Separate Gates ( Quantum Dot Structures)
- Atomic-Like Properties of Semiconductor Quantum Dots ( Quantum Dot Structures)
- GaAs/AlGaAs/InGaAs Vertical Triple Barrier Single Electron Transistors
- GaAs/AlGaAs/InGaAs Vertical Triple Barrier Single Electron Transistors
- Sub-Micron Vertical AlGaAs/GaAs Resornarnt Tunneling Single Electron Transistor
- Quantized Conductance Observed in Quantum Wires 2 to 10 μm Long
- Weak Antilocalization in Si δ-Doped In_xGa_As Systems
- Multiple Gated InAs Dot Ensembles
- Electrical Pump and Probe Measurements of a Quantum Dot in the Coulomb Blockade Regime
- Transport Properties of Modulation-Doped Structures Grown by Molecular Beam Epitaxy after Focused Ion Beam Implantation
- 31a-N-3 Resistance oscillations in wires with FIB-induced line-ordered scatterers
- 31a-N-3 Resistance oscillations in wires with FIB-induced line-ordered scatterers
- 7p-N-7 Magnetoresistance Oscillations in a Magnetic Micro-cavity and Magnetic Antidot
- 25p-YG-4 Internal Magnetic Focusing in an Array of Ballistic Cavities
- Quantized Conductance in InGaAs Point Contacts at High Temperatures
- Resonant Tunneling Properties of Single Electron Transistors with a Novel Double-Gate Geometry
- High-Mobility Quantum Wires Fabricated by Ga Focused Ion Beam Shallow Implantation
- Basic Properties of Magnetostrictive Actuators Using Tb-Fe and Sm-Fe Thin Films (Special Issue on Micromachine Technology)
- 25p-YG-4 Internal Magnetic Focusing in an Array of Ballistic Cavities
- Hot Electron Ballistic Transport in Small Four-Terminal n-AlGaAs/InGaAs/GaAs Structures
- Internal Magnetic Focusing in an Array of Open Quantum Dots
- The Kondo Effect Enhanced by State Degeneracy(Kondo Effect-40 Years after the Discovery)
- Regulated Single Electron to Single Photon Conversion in a Constant-Current-Driven pn Microjunction
- Self-Limited Facet Growth for GaAs Tetrahedral Quantum Dots
- Carrier Concentration in Quantum Wires Fabricated by Ractive Ion Beam Etching
- A Double Quantum Dot as an Artificial Two-Level System