Room Temperature Performance of (311) GaAs Quantum-Wire Structures

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-01-30

著者

• Noetzel R

  Paul‐drude‐inst. Festkoerperelektronik Berlin Deu

• Notzel Richard

  Ntt Opto-electronics Laboratories

• Ploog Klaus

  Paul-drude-institute For Solid State Electronics

• Ploog Klaus

  Paul-drude-institut Fur Festkorperelektronik

• Notomi Masaya

  Ntt Opto-electronics Laboratories

• Furuta Tomofumi

  Ntt-lsi Laboratories

• Ploog Klaus

  Paul-drude-institut Feur Festkoerperelektronik Berlin Germany

• Kamada Hidehiro

  Ntt Opto-electronics Laboratories

• YANAGAWA Tsutomu

  NTT Opto-electronics Laboratories

関連論文

• 自己組織化InGaAs歪量子デイスクと半導体レーザ応用 (招待講演)
• GaAs(311) B基板上のInGaAs自己組織化現象と極微細レーザーへの応用
• 自己組織化InGaAsひずみ量子ディスクレーザー
• Dephasing Processes in Self-Organized Strained InGaAs Single-Dots on (311)B-GaAs Substrate ( Quantum Dot Structures)
• Surfaces and Interfaces of (Al, Ga) As Heterostructures on Unpatterned and Patterned GaAs Substrates
• Interface Characterization of Semiconductor Quantum Nanostructures ( Quantum Dot Structures)
• Self-Oscillations of the Current in Doped Semiconductor Superlattices
• Atomic Hydrogen Induced Step Bunching on High-Index GaAs Substrates for Fabrication of Novel Quantum Wire and Quantum Dot Arrays by Molecular Beam Epitaxy
• New Challenges for Deltalike Confinement of Impurities in GaAs
• Impurity-Induced Breakdown in GaAs with Partially Ordered Si-Doping
• Ordered Quantum Dots : A New Self-Organizing Growth Mode on High-Index Semiconductor Surfaces
• Ordered Quantum Dots: Atomic Force Microscopy Study of a New Self-Organizing Growth Mode on GaAs (311)B Substrates
• Weak Antilocalization in Si δ-Doped In_xGa_As Systems
• 25p-YE-1 Highly uniform GaAs quantum wire and quantum dot arrays grown on patterned high-index substrates by hydrogen-assisted MBE
• Magnetotransport in Two Parallel Two-Dimensional Electron Gases Formed by a Delta-Doped Layer and a Heterojunction in GaAs
• Room Temperature Performance of (311) GaAs Quantum-Wire Structures
• Self-Organization Phenomenon in a Strained InGaAs System and Its Application for Quantum Disk Lasers (Special Issue on Quantum Effect Divices and Their Fabrication Technologies)
• Self-Organization of Boxlike Microstructures on GaAs (311)B Surfaces by Metalorganic Vapor-Phase Epitaxy
• Spatially Ordered Self-Assembled Quantum Dots with Uniform Shapes Fabricated by Patterning Nanoscale SiN Islands
• Exciton Spin Relaxation Properties in Zero Dimensional Semiconductor Quantum Dots
• Perfect Spatial Ordering of Self-Organized InGaAs/AlGaAs Quantum Disks on GaAs (311)B Substrate with Silicon-Nitride Dot Array
• Prefect Spatial Ordering of Self-Organized InGaAs/AlGaAs Box-Like Structure on GaAs (311)B Substrate with Buried Silicon-Nitride Dot Array
• Effects of Dimensionality on Radiative Recombination Lifetime of Excitons in Thin Quantum Boxes of Intermediate Regime between Zero and Two Dimensions ( Quantum Dot Structures)
• Novel Selective Growth Using a Native Oxide on a (110) Cleaved Plane of AlGaAs/GaAs Superlattice
• Application of Atomic Force Microseopy to the Study of Size Fluetuation in E-Beam Patterned Quantum Wire Structures
• Quantum Wire Fabrication by E-Beam Elithography Using High-Resolution and High-Sensitivity E-Beam Resist ZEP-520
• Effect of electron spin-spin exchange interaction on spin precession in coupled quantum well
• Micro-Photoluminescence Study at Room Temperature of Sidewall Quantum Wires Formed on Patterned GaAs (311)A Substrates by Molecular Beam Epitaxy

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