25p-YE-1 Highly uniform GaAs quantum wire and quantum dot arrays grown on patterned high-index substrates by hydrogen-assisted MBE
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 1998-09-05
著者
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Ploog Klaus
Paul-drude-institute For Solid State Electronics
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Ploog Klaus
Paul-drude-institut Feur Festkoerperelektronik Berlin Germany
関連論文
- Surfaces and Interfaces of (Al, Ga) As Heterostructures on Unpatterned and Patterned GaAs Substrates
- Interface Characterization of Semiconductor Quantum Nanostructures ( Quantum Dot Structures)
- Self-Oscillations of the Current in Doped Semiconductor Superlattices
- Atomic Hydrogen Induced Step Bunching on High-Index GaAs Substrates for Fabrication of Novel Quantum Wire and Quantum Dot Arrays by Molecular Beam Epitaxy
- New Challenges for Deltalike Confinement of Impurities in GaAs
- Impurity-Induced Breakdown in GaAs with Partially Ordered Si-Doping
- Weak Antilocalization in Si δ-Doped In_xGa_As Systems
- 25p-YE-1 Highly uniform GaAs quantum wire and quantum dot arrays grown on patterned high-index substrates by hydrogen-assisted MBE
- Magnetotransport in Two Parallel Two-Dimensional Electron Gases Formed by a Delta-Doped Layer and a Heterojunction in GaAs
- Room Temperature Performance of (311) GaAs Quantum-Wire Structures
- Micro-Photoluminescence Study at Room Temperature of Sidewall Quantum Wires Formed on Patterned GaAs (311)A Substrates by Molecular Beam Epitaxy