GaSb Single Crystal Growth in <111> Direction
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1982-07-20
著者
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Katsui Akinori
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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UEMURA Chikao
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Uemura Chikao
Ibaraki Electrical Communication Laboratory Nippon Telegraph & Telephone Public Corporation
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- Liquid-Phase Epitaxial Growth of InGaAsSb/GaSb and InGaAsSb/AlGaAsSb DH Wafers
- Isoelectronic Double Doping Effect on Dislocation Density of InP Single Crystal
- Growth of Low Dislocation Density InP Crystals by the SSD Method
- Growth of Dislocation-Free Undoped InP Crystals
- LEC Growth of GaSb Single Crystals Using Boric Oxide
- LEC Growth of InP Single Crystals Using Ceramics AIN Crucible