Growth of Dislocation-Free Undoped InP Crystals
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概要
- 論文の詳細を見る
Dislocation-free undoped InP crystals were grown by the liquid encapsulation Czochralski method by means of a necking-in procedure. A low temperature gradient near the solid-liquid interface was essential for growth, and a temperature gradient of 55℃/cm enabled the growth of a dislocation-free crystal in a pulling of the 111 P direction up to a diameter of 15 mm. No etch pits (either D- or S-pit) were observed on the etched surfaces of wafers cut from each position of the crystal. This suggests the absence of microdefects in the crystal.
- 社団法人応用物理学会の論文
- 1980-06-05
著者
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YAMAMOTO Akio
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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UEMURA Chikao
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Uemura Chikao
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Uemura Chikao
Ibaraki Electrical Communication Laboratory Nippon Telegraph & Telephone Public Corporation
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Tohno Shun-ichi
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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SHINOYAMA Seiji
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Shinoyama Seiji
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Yamamoto Akio
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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