Surface Band Bending Effects on Photoluminescence Intensity in n-InP Sehottky and MIS Diodes
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-06-05
著者
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Ando Koushi
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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YAMAMOTO Akio
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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YAMAGUTI Masafumi
Ibaraki Electrical Communication Laboratory,Nippon Telegraph and Telephone Public Corporation
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Yamaguti Masafumi
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Yamamoto Akio
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Impurity Concentration Effects on Radiation Defect Introduction in InP Examined by in situ Measurement
- Electron Irradiation Damage in Radiation-Resistant InP Solar Cells
- Proton Irradiation Damage in GaAs Single Crystals Examined for Solar Cells
- Surface Field Effect of Photoluminescence Intensity in ZnSe Schottky Diode
- Defect Levels and Minority Carrier Diffusion Length in 1-MeV Electron Irradiated n-InP
- Flat Band State Determination of MIS and Schottky Interfaces by Modulated Photoluminescence Method
- Surface Band Bending Effects on Photoluminescence Intensity in n-InP Sehottky and MIS Diodes
- Growth of Low Dislocation Density InP Crystals by the SSD Method
- Growth of Dislocation-Free Undoped InP Crystals
- InP Single Crystal Growth by the Synthesis, Solute Diffusion Method
- ln_Ga_AS Solar Cells Grown by Molecular-Beam Epitaxy
- Epitaxial Growth of ZnSe on Ge by Fused Salt Electrolysis