Flat Band State Determination of MIS and Schottky Interfaces by Modulated Photoluminescence Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-07-05
著者
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Ando Koushi
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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YAMAGUCHI Masafumi
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Yamaguchi Masafumi
Ibaraki Electrical Communication Laboratory
関連論文
- Impurity Concentration Effects on Radiation Defect Introduction in InP Examined by in situ Measurement
- Electron Irradiation Damage in Radiation-Resistant InP Solar Cells
- Photoluminescence Studies of As-Grown, Heat-Treated and Ion-Implanted CdS Single Crystals
- Proton Irradiation Damage in GaAs Single Crystals Examined for Solar Cells
- Surface Field Effect of Photoluminescence Intensity in ZnSe Schottky Diode
- Defect Levels and Minority Carrier Diffusion Length in 1-MeV Electron Irradiated n-InP
- Flat Band State Determination of MIS and Schottky Interfaces by Modulated Photoluminescence Method
- Surface Band Bending Effects on Photoluminescence Intensity in n-InP Sehottky and MIS Diodes
- ln_Ga_AS Solar Cells Grown by Molecular-Beam Epitaxy
- Effects of Heat Treatment of CdS Single Crystals Examined by ESCA
- Thinning of LiNbO_3 for Acousto-Optic Deflectors by Ion Etching
- Effects of Impurities on Gamma-Irradiated Silicon Crystal Examined by Photovoltaic Effect of P-N Junction Diode
- Annealing Behavior of the Insulating Layer in Ion-Implanted CdS
- Surface Contamination of Silicon Produced by Ion Implantation
- Blue Electroluminescenee from a ZnSe MIS Structure
- Thermal Nitridation of InP
- Epitaxial Growth of ZnSe on Ge by Fused Salt Electrolysis
- Ohmic Contacts to CdS
- Surface Effects of Radiation on MOS Diodes
- Effcets of Radiation on Silicon Planar Transistors
- Application of Radiation Damage to Radiation Dosimetry
- Crystal Defects of Silicon Films Formed by Molecular Beam Epitaxy