Effects of Impurities on Gamma-Irradiated Silicon Crystal Examined by Photovoltaic Effect of P-N Junction Diode
スポンサーリンク
概要
- 論文の詳細を見る
Minority carrier lifetime in ^<60>Co gamma-irradiated silicon bulk crystals is examined by photovoltaic effect of silicon p-n junction, and following results are disclosed. 1) Damage constant, K, increases with impurity concentration of bulk crystals. K is smaller in p-type crystals than in n-type. 2) For isochronal annealing, recovery stages of n-type bulk crystals at 100-150℃ and 300℃ are found. In p-type crystals, reverse annealing is observed at 200-300℃. 3) From the temperature dependence of carrier lifetime, energy levels of the recombination centers at E_c-0.42 for n-type and E_v+0.32, E_v+0.25 eV for p-type crystals are found. 4) Recovery stage of p-type bulk crystals due to gamma irradiation at 81 K is observed at about 150 K, but that of n-type is not observed between 80 and 300 K. 5) The lifetime degradation in p-type crystals due to gamma irradiation at 81 K is reduced when minority carrier is injected after the irradiation.
- 社団法人応用物理学会の論文
- 1972-07-05
著者
-
Yamaguchi Masafumi
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Yamaguchi Masafumi
Ibaraki Electrical Communication Laboratory
-
NAGAI Osamu
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
-
Nagai Osamu
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Impurity Concentration Effects on Radiation Defect Introduction in InP Examined by in situ Measurement
- Electron Irradiation Damage in Radiation-Resistant InP Solar Cells
- Photoluminescence Studies of As-Grown, Heat-Treated and Ion-Implanted CdS Single Crystals
- Proton Irradiation Damage in GaAs Single Crystals Examined for Solar Cells
- Surface Field Effect of Photoluminescence Intensity in ZnSe Schottky Diode
- Defect Levels and Minority Carrier Diffusion Length in 1-MeV Electron Irradiated n-InP
- Flat Band State Determination of MIS and Schottky Interfaces by Modulated Photoluminescence Method
- ln_Ga_AS Solar Cells Grown by Molecular-Beam Epitaxy
- Effects of Heat Treatment of CdS Single Crystals Examined by ESCA
- Thinning of LiNbO_3 for Acousto-Optic Deflectors by Ion Etching
- Effects of Impurities on Gamma-Irradiated Silicon Crystal Examined by Photovoltaic Effect of P-N Junction Diode
- Annealing Behavior of the Insulating Layer in Ion-Implanted CdS
- Surface Contamination of Silicon Produced by Ion Implantation
- Blue Electroluminescenee from a ZnSe MIS Structure
- Thermal Nitridation of InP
- Epitaxial Growth of ZnSe on Ge by Fused Salt Electrolysis
- Ohmic Contacts to CdS
- Surface Effects of Radiation on MOS Diodes
- Effcets of Radiation on Silicon Planar Transistors
- Application of Radiation Damage to Radiation Dosimetry
- Crystal Defects of Silicon Films Formed by Molecular Beam Epitaxy