Ando Koushi | Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

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概要

• 同名の論文著者
• Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporationの論文著者

関連著者

• Ando Koushi

  Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• YAMAGUCHI Masafumi

  Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Yamaguchi Masafumi

  Ibaraki Electrical Communication Laboratory

• YAMAMOTO Akio

  Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Yamamoto Akio

  Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Yamaguchi M

  Department Of Physics Yokohama National University

• Ando K

  Toyota Technological Institute

• Yamaguchi Masafumi

  Department Of Physiological Chemistry Hiroshima University School Of Medicine

• Yamaguchi Masafumi

  Ntt Electrical Communications Laboratories

• Yamamoto A

  Chiba Works Kawasaki Steel Corporation

• Ando K

  Department Of Electrical And Electronic Engineering Tottori University

• Yamaguchi M

  Nagoya Univ. Nagoya Jpn

• Uemura Chikako

  Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• YAMAGUTI Masafumi

  Ibaraki Electrical Communication Laboratory,Nippon Telegraph and Telephone Public Corporation

• Uemura Chikako

  Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Yamaguti Masafumi

  Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Yamamoto Akio

  Department of Electrical and Electronics Engineering, Faculty of Engineering, Fukui University

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著作論文

• Surface Field Effect of Photoluminescence Intensity in ZnSe Schottky Diode
• Defect Levels and Minority Carrier Diffusion Length in 1-MeV Electron Irradiated n-InP
• Flat Band State Determination of MIS and Schottky Interfaces by Modulated Photoluminescence Method
• Surface Band Bending Effects on Photoluminescence Intensity in n-InP Sehottky and MIS Diodes

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