Growth of Low Dislocation Density InP Crystals by the SSD Method
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概要
- 論文の詳細を見る
Sulfur-doped InP single crystals were grown by the synthesis, solute diffusion (SSD) method. The doping concentration was controlled by varying the partial pressure of sulfur in the ampoule. The morphology and dislocation density of the grown crystals were studied. Sulfur of high concentration in the indium melt did not inhibit the single crystal growth of InP. It was found from X-ray topographic studies that the crystals became dislocation-free at the sulfur doping level of 2×10^<19>cm^<-3>.
- 社団法人応用物理学会の論文
- 1980-06-05
著者
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YAMAMOTO Akio
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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UEMURA Chikao
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Uemura Chikao
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Uemura Chikao
Ibaraki Electrical Communication Laboratory Nippon Telegraph & Telephone Public Corporation
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Tohno Shun-ichi
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Yamamoto Akio
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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