InP Single Crystal Growth by the Synthesis, Solute Diffusion Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1978-10-05
著者
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YAMAMOTO Akio
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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UEMURA Chikao
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Uemura Chikao
Ibaraki Electrical Communication Laboratory Nippon Telegraph & Telephone Public Corporation
関連論文
- Impurity Concentration Effects on Radiation Defect Introduction in InP Examined by in situ Measurement
- Electron Irradiation Damage in Radiation-Resistant InP Solar Cells
- Semiconductor Materials for 2〜4μm Region Optical Sources and Room Temperature Operation of InGaAsSb/AlGaAsSb DH Lasers : SOLID SOLUTIONS
- Room Temperature Operation of the InGaAsSb/AlGaAsSb DH Laser at 1.8 μm Wavelength
- Liquid-Phase Epitaxial Growth of InGaAsSb/GaSb and InGaAsSb/AlGaAsSb DH Wafers
- Proton Irradiation Damage in GaAs Single Crystals Examined for Solar Cells
- Surface Field Effect of Photoluminescence Intensity in ZnSe Schottky Diode
- Surface Band Bending Effects on Photoluminescence Intensity in n-InP Sehottky and MIS Diodes
- Isoelectronic Double Doping Effect on Dislocation Density of InP Single Crystal
- Growth of Low Dislocation Density InP Crystals by the SSD Method
- Growth of Dislocation-Free Undoped InP Crystals
- LEC Growth of GaSb Single Crystals Using Boric Oxide
- InP Single Crystal Growth by the Synthesis, Solute Diffusion Method
- GaSb Single Crystal Growth in Direction
- ln_Ga_AS Solar Cells Grown by Molecular-Beam Epitaxy
- Epitaxial Growth of ZnSe on Ge by Fused Salt Electrolysis