Isoelectronic Double Doping Effect on Dislocation Density of InP Single Crystal
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概要
- 論文の詳細を見る
A Ga+Sb doping technique is proposed for reducing the dislocation density in LEC-InP crystals. Using SSMS and SIMS measurements, effective distribution coefficients of Ga and Sb in InP are estimated to be 3.35 and 0.12, respectively. Effectiveness of uniform Ga+Sb concentration doping all along the growth direction is presented. Nearly dislocation-free InP crystals 25 mm in diameter are prepared using Ga+Sb doping concentration above 6×10^<18>cm^<-3>.
- 社団法人応用物理学会の論文
- 1984-02-20
著者
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Katsui Akinori
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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UEMURA Chikao
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Uemura Chikao
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Uemura Chikao
Ibaraki Electrical Communication Laboratory Nippon Telegraph & Telephone Public Corporation
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Tohno Shun-ichi
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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KUBOTA Eishi
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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SHINOYAMA Seiji
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Kubota Eishi
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Shinoyama Seiji
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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