In-Depth Distribution of Stacking Faults in Thermally-Oxidized Czochralski Silicon Wafers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-10-05
著者
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SHINOYAMA Seiji
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Shinoyama Seiji
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Isoelectronic Double Doping Effect on Dislocation Density of InP Single Crystal
- Growth of Dislocation-Free Undoped InP Crystals
- In-Depth Distribution of Stacking Faults in Thermally-Oxidized Czochralski Silicon Wafers