LEC Growth of InP Single Crystals Using Ceramics AIN Crucible

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概要

• 論文の詳細を見る

• The liquid encapsulated Czochralski technique using a ceramics AIN crucible has been investigated for the growth of InP single crystals. High purity crystals, typically having a carrier concentration of 2.2×10^<15> cm^<-3> and a Hall mobility of 30100 cm^2/(V・s) at 77 K for the first-to-freeze portion, are grown without serious contamination of electrically active impurities from the crucible. Impurity analyses of the grown crystals and the B_2O_3 encapsulants are carried out. The results are compared with those for the crystal grown from a pBN crucible.

• 社団法人応用物理学会の論文
• 1985-01-20

著者

• Katsui Akinori

  Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• KUBOTA Eishi

  Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Kubota Eishi

  Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

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• Optical and Magneto-Optical Properties of MnCuBi Thin Films
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