Surface Damage in InP Induced during SiO_2 Deposition by rf Sputtering

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1979-06-05

著者

• Oe Kunishige

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• 椿 光太郎

  東洋大学工学部

• Ando Seigo

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Tsubaki Kotaro

  Musashino Electrical Communication Laboratory

• Sugiyama Koichi

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Oe Kunishige

  Musashino Electrical Communication Laboratory

• Sugiyama Koichi

  Musashino Electrical Communication Laboratory

• SUGIYAMA Koichi

  Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

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• GaN系ヘテロ構造の電気伝導特性およびFET静特性
• SC-7-10 GaN系ヘテロ構造の電気伝導特性とFET特性
• GaN系ヘテロ構造の電気伝導特性およびFET静特性
• 直列ポイントコンタクトの非平衡電流雑音特性
• 28a-F-6 周期ポテンシャル下の二次元電子ガスの強磁場伝導
• 29p-J-4 半導体微細構造の量子輸送
• Superior Pinch-Off Characteristics at 400℃ in AlGaN/GaN Heterostructure Field Effect Transistors
• Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
• Liquid Phase Epitaxial Growth of CuGaSe_2 on ZnSe
• Heat Treatment of Zn-Doped p-Type InP
• Heat Treatment of n-Type InP in Controlled Phosphorus Vapor
• Liquid-Phase Epitaxy of Ga_In_yAs_xSb_ Quaterary Alloys on GaSb
• lnSb_Bi_x Films Grown by Molecular Beam Epitaxy
• RHEED Study of InSb Films Grown by Molecular Beam Epitaxy
• Surface Damage in InP Induced during SiO_2 Deposition by rf Sputtering
• Buried Stripe GaInAsP/InP DH Laser Prepared by Using Meltback Method
• Surface Emitting LED's for the 1.2-1.3 μm Wavelength with GaInAsP/InP Double Heterostructures
• 1.3 μm CW Operation of GaInAsP/InP DH Diode Lasers at Room Tenmperature
• AlGaN/GaNヘテロ構造FET (特集論文1 窒化物ワイドギャップ半導体電子デバイス)
• Short Cavity Semiconductor Laser
• Effects of Uniaxial Stress on the Double Heterostructure Lasers
• Vapor Phase Epitaxial Growth and Characterization of Ga_In_yAs_P_x Quaternary Alloys
• In_xGa_As Injection Lasers
• GaInAsP-InP Double Heterostructure Lasers Prepared by a New LPE Apparatus
• Etching of Al_xGa_As in Alkaline Solution
• Phase Diagram of the GaAs_Sb_x System
• Selectively-Doped GaAs/n-AlGaAs Heterostructures Grown by MOCVD
• Carrier Concentration in Quantum Wires Fabricated by Ractive Ion Beam Etching
• Selective Liquid Phase Epitaxy of AlGaAs
• Sub-Micron Vertical Double Magnetic Barrier Device
• Molecular Beam Epitaxy of In-Doped CdTe

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