RHEED Study of InSb Films Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
The surface structures of InSb films grown on (111)A, (111)B and (001)-oriented InSb substrates by molecular beam epitaxy were investigated in situ with a reflection high-energy electron diffraction technique, and the dependences of the surface reconstructions on the relative arrival rates of Sb and In and the surface temperature are reported. The change in surface structures onthe (111)B and (001) faces occurs when the Sb/In ratio is about unity, and the ratio at transition does not depend on the substrate temperature. This behavior is interpreted as meaning that the sticking coefficient of Sb atoms (or molecules) is nearly unity for the Sb/In ratio≅1.
- 社団法人応用物理学会の論文
- 1980-07-05
著者
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Oe Kunishige
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Ando Seigo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Sugiyama Koichi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Oe Kunishige
Musashino Electrical Communication Laboratory
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Sugiyama Koichi
Musashino Electrical Communication Laboratory
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SUGIYAMA Koichi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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