Oe Kunishige | Musashino Electrical Communication Laboratory
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概要
関連著者
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Oe Kunishige
Musashino Electrical Communication Laboratory
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Sugiyama Koichi
Musashino Electrical Communication Laboratory
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Oe Kunishige
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Ando Seigo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Sugiyama Koichi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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SUGIYAMA Koichi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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YAMAGUCHI Masao
Musashino Electrical Communication Laboratory
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椿 光太郎
東洋大学工学部
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Kano Hiroyuki
Musashino Electrical Communication Laboratory N.t.t.
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Yamaguchi Masafumi
Department Of Physiological Chemistry Hiroshima University School Of Medicine
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Urisu Tsuneo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Tsubaki Kotaro
Musashino Electrical Communication Laboratory
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Kojima H
Nagoya Univ.
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Urisu Tsuneo
Musashino Electrical Communication Laboratory Ntt
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Mizushima Y
Hamamatsu Phtonics Hamakita Jpn
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Mizushima Yoshihiko
Musashino Electrical Communication Laboratory Nippon Tel
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Oe Kunishige
Musashino Electrical Communication Laboratory N.t.t.
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Yamaguchi Masao
Electrical Communication Laboratories
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Yamaguchi Masao
Musashino Electrical Communication Laboratory Ntt
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Sugiyama Koichi
Musashino Electrical Communication Laboratory N.t.t.
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KOJIMA Hiroshi
Musashino Electrical Communication Laboratory, N.T.T.
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OTA Tadahisa
Musashino Electrical Communication Laboratory, NTT
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Oe Kunishige
Musashino Electrical Communication Laboratory Ntt
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Ota Tadahisa
Musashino Electrical Communication Laboratory Ntt
著作論文
- lnSb_Bi_x Films Grown by Molecular Beam Epitaxy
- RHEED Study of InSb Films Grown by Molecular Beam Epitaxy
- Surface Damage in InP Induced during SiO_2 Deposition by rf Sputtering
- Buried Stripe GaInAsP/InP DH Laser Prepared by Using Meltback Method
- Surface Emitting LED's for the 1.2-1.3 μm Wavelength with GaInAsP/InP Double Heterostructures
- 1.3 μm CW Operation of GaInAsP/InP DH Diode Lasers at Room Tenmperature
- In_xGa_As Injection Lasers
- GaInAsP-InP Double Heterostructure Lasers Prepared by a New LPE Apparatus
- Phase Diagram of the GaAs_Sb_x System